Impact of Source/Drain Metal Work Function on the Electrical Characteristics of Anatase TiO2-Based Thin Film Transistors

2017 ◽  
Vol 6 (7) ◽  
pp. P379-P382 ◽  
Author(s):  
Hyunwoo Choi ◽  
Jaemin Shin ◽  
Changhwan Shin
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Thin Film Transistors ◽  
Anatase Tio2 ◽  
Electrical Characteristics ◽  
Metal Work Function ◽  
Metal Work

Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function

1988 ◽  
Vol 63 (10) ◽  
pp. 5040-5043 ◽  
Author(s):  
A. S. Yapsir ◽  
T.‐M. Lu ◽  
P. Hadizad ◽  
J. C. Corelli ◽  
A. Sugerman ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Metal Work Function ◽  
Metal Work

Effect of the gate metal work function on water-gated ZnO thin-film transistor performance

2016 ◽  
Vol 49 (27) ◽  
pp. 275101 ◽  
Author(s):  
Mandeep Singh ◽  
Mohammad Yusuf Mulla ◽  
Maria Vittoria Santacroce ◽  
Maria Magliulo ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Metal Work Function ◽  
Metal Work

Contact Dependence of α-Sexithienyl Thin Film Transistor Characteristics

1995 ◽  
Vol 413 ◽  
Author(s):  
Y. Y. Lin ◽  
D. J. Gundlach ◽  
T. N. Jackson
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Thin Film Transistor ◽  
Active Material ◽  
Metal Work Function ◽  
Layer Deposition ◽  
Metal Work ◽  
Reactive Metals ◽  
Contact Metal ◽  
Intermediate Performance

ABSTRACTWe have fabricated thin film transistors (TFTs) using ca-sexithienyl (α-6T) as the active material and have investigated the dependence of transistor characteristics on the choice of source/drain contact metal. Using α-6T synthesized from terthiophene and purified by vacuum gradient sublimation, we have fabricated TFTs with material deposited by evaporation onto substrates held at both room and elevated temperature. We have studied devices fabricated by depositing the active material onto previously patterned source/drain contacts and also by depositing the source/drain contacts after the active layer deposition, in both cases with the gate contact and dielectric underneath the active material. For both device types we find a clear dependence on the choice of source/drain contact metal with correlation to the metal work function. For our devices the best performance is obtained using metals with largest work function (Pd, Pt, or Au), intermediate performance is obtained using a metal with somewhat smaller work function (Cr), and significantly degraded performance is obtained using a metal with relatively small work function (Al). Despite the apparent correlation to the metal work function, we cannot yet rule out oxidation or other chemical effects with the more reactive metals. We have also examined doping of the α-6T layer as a possible route to improved contacts and find that FeCI3 can be used to shift the threshold voltage of α-6T TFTs by more than 50 V.

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights
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