Electrochemical Modeling of the Effects of F Ions in the AlGaN Layer on the Two-Dimensional Electron Density in AlGaN/GaN HEMTs

2019 ◽  
Vol 8 (9) ◽  
pp. P472-P479
Author(s):  
Ling-Feng Mao
Keyword(s):  
Electron Density ◽  
Two Dimensional ◽  
Algan Layer ◽  
Dimensional Electron ◽  
Electrochemical Modeling ◽  
Gan Hemts

Comparative study on extinction process of gas-blasted air and CO2arc discharge using two-dimensional electron density imaging sensor

2017 ◽  
Vol 50 (17) ◽  
pp. 175202 ◽  
Author(s):  
Yuki Inada ◽  
Akiko Kumada ◽  
Hisatoshi Ikeda ◽  
Kunihiko Hidaka ◽  
Tomoyuki Nakano ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Density ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Extinction Process ◽  
Imaging Sensor

Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices

1987 ◽  
Vol 35 (8) ◽  
pp. 3984-3989 ◽  
Author(s):  
V. M. S. Gomes ◽  
A. S. Chaves ◽  
J. R. Leite ◽  
J. M. Worlock
Keyword(s):  
Electron Density ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Self Consistent

Optical control of two-dimensional electron density in a single asymmetric quantum well

1986 ◽  
Vol 170 (1-2) ◽  
pp. 618-623 ◽  
Author(s):  
A.S. Chaves ◽  
A.F.S. Penna ◽  
J.M. Worlock ◽  
G. Weimann ◽  
W. Schlapp
Keyword(s):  
Quantum Well ◽  
Electron Density ◽  
Optical Control ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Asymmetric Quantum

scholarly journals Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

2018 ◽  
Vol 8 (2) ◽  
pp. 954 ◽  
Author(s):  
Asmae Babaya ◽  
Bri Seddik ◽  
Saadi Adil
Keyword(s):  
Electron Gas ◽  
Voltage Characteristic ◽  
Two Dimensional ◽  
Algan Layer ◽  
Dimensional Electron ◽  
Current Voltage Characteristic ◽  
Two Dimensional Electron Gas ◽  
Gas Density ◽  
Current Voltage ◽  
Dimensional Electron Gas

This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the two-dimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed.

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