Possible Models of Electron-Energy Transfer in Resistance Switching by Sputter-Deposited Silicon Oxide Films: Potential of Extremely Low-Energy Switching

2018 ◽  
Vol 7 (3) ◽  
pp. Q21-Q25 ◽  
Author(s):  
Yasuhisa Omura ◽  
Takuya Akano ◽  
Shingo Sato
Keyword(s):  
Energy Transfer ◽  
Electron Energy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Resistance Switching ◽  
Low Energy ◽  
Sputter Deposited

Nanoporous structure of sputter-deposited silicon oxide films characterized by positronium annihilation spectroscopy

2002 ◽  
Vol 91 (3) ◽  
pp. 1704-1706 ◽  
Author(s):  
Y. Kobayashi ◽  
W. Zheng ◽  
T. B. Chang ◽  
K. Hirata ◽  
R. Suzuki ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Nanoporous Structure ◽  
Positronium Annihilation ◽  
Sputter Deposited

Positron annihilation study of defects and Si nanoprecipitation in sputter-deposited silicon oxide films

2003 ◽  
Vol 379 (3-4) ◽  
pp. 359-363 ◽  
Author(s):  
R.S. Yu ◽  
K. Ito ◽  
K. Hirata ◽  
K. Sato ◽  
W. Zheng ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Positron Annihilation Study ◽  
Sputter Deposited

High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

1989 ◽  
Vol 146 ◽  
Author(s):  
Shiro Suyama ◽  
Akio Okamoto ◽  
Seiiti Shirai ◽  
Tadashi Serikawa
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Drain Current ◽  
Gate Oxide ◽  
Breakdown Field ◽  
Subthreshold Slope ◽  
High Quality ◽  
Argon Mixture ◽  
Sputter Deposited

ABSTRACTHigh-quality gate-oxide films for poly-Si TFTs (Thin Film Transistors) are successfully produced by oxygen-argon sputter deposition at a low temperature (200°C). Silicon-oxide films that are sputter-deposited in an oxygen-argon mixture has higher resistivity and breakdown field than films that are sputterdeposited only in argon and thermal oxides grown on poly-Si. Moreover, TFT field-effect mobilities are considerably improved by mixing oxygen into the sputtering gas, resulting in 350 cm2 /V.sec. Subthreshold slope and threshold voltage are also reduced to 5.5 V and 0.8 V/decade. A temperature-dependence measurement of the drain current shows that these improvements in TFT characteristics result from a lowering of the barrier height at the poly-Si grain boundaries, indicating a reduction in the trap density at these boundaries. Results confirm the usefulness of gate-oxide films that are sputter-deposited in an oxygen-argon mixture, for lowtemperature fabricated poly-Si TFTs.

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