Effect of Driving Frequency on Growth and Structure of Silicon Films Deposited by Radio-Frequency and Very-High-Frequency Magnetron Sputtering

2014 ◽  
Vol 3 (5) ◽  
pp. Q74-Q78 ◽  
Author(s):  
Haijie He ◽  
Chao Ye ◽  
Xiangying Wang ◽  
Fupei Huang ◽  
Yi Liu
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
High Frequency ◽  
Silicon Films ◽  
Driving Frequency ◽  
Very High Frequency ◽  
Very High

Effect of gas pressure on ion energy at substrate side of Ag target radio-frequency and very-high-frequency magnetron sputtering discharge

2021 ◽  
Author(s):  
Weichen Ni ◽  
Chao Ye ◽  
Yiqing Yu ◽  
Xiangying Wang
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
High Frequency ◽  
Excitation Frequency ◽  
Gas Pressure ◽  
Very High Frequency ◽  
Magnetron Discharge ◽  
Ion Energy ◽  
Substrate Side ◽  
Very High

Abstract The effect of gas pressure on ion energy distribution at the substrate side of Ag target radio-frequency (RF) and very-high-frequency (VHF) magnetron sputtering discharge was investigated. At the lower pressure, the evolution of maximum ion energy (E) with the discharge voltage (V) varied with the excitation frequency, due to the joint contribution of the ion generation in the bulk plasma and the ion movement across the sheath related to the ion transit sheath time τi and RF period RF. At the higher pressure, the evolution of E-V relationships do not vary with the excitation frequency, due to the balance between the energy lost through collisions and the energy gained by acceleration in the electric field. Therefore, for the RF and VHF magnetron discharge, the lower gas pressure can have a clear influence on the E-V relationship.

Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering

2017 ◽  
Vol 26 (6) ◽  
pp. 065207 ◽  
Author(s):  
Jia-Min Guo ◽  
Chao Ye ◽  
Xiang-Ying Wang ◽  
Pei-Fang Yang ◽  
Su Zhang
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Driving Frequency ◽  
Very High Frequency ◽  
Very High

Nanocrystalline Silicon Films Grown at High Pressure in Very High Frequency Plasma Enhanced Chemical Vapor Deposition System

2010 ◽  
Vol 663-665 ◽  
pp. 1171-1174 ◽  
Author(s):  
Yan Qing Guo ◽  
Rui Huang ◽  
Jie Song ◽  
Xiang Wang ◽  
Yi Xiong Zhang
Keyword(s):  
High Pressure ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Very High Frequency ◽  
Hydrogen Dilution ◽  
Very High ◽  
Nanocrystalline Silicon Films

Nanocrystalline silicon films have been fabricated from SiH4 diluted with H2 in very high frequency (40.68 MHz) plasma enhanced chemical vapor deposition system at low temperatures (250oC). The influence of pressure on the structural properties of nanocrystalline silicon films has been investigated. The experimental results reveal that a very high hydrogen dilution is needed to crystallize the film grown at high pressure. If the hydrogen dilution is not high enough, the film could also be crystallized through lowering the pressure. Furthermore, the crystallinity and grain size increase with decreasing the pressure. These results could be attributed to the increase of ion bombardment energy and the higher atomic hydrogen flux toward the growing film surface at lower pressures.

Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF4Plasmas

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1532-L1534 ◽  
Author(s):  
Takayuki Ohta ◽  
Masaru Hori ◽  
Tetsuro Ishida ◽  
Toshio Goto ◽  
Masafumi Ito ◽  
...  
Keyword(s):  
High Frequency ◽  
Driving Frequency ◽  
Very High Frequency ◽  
Capacitively Coupled ◽  
Translational Temperature ◽  
Absolute Density ◽  
Very High

Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering

2017 ◽  
Vol 26 (9) ◽  
pp. 095206
Author(s):  
Yue Zhang ◽  
Chao Ye ◽  
Xiang-Ying Wang ◽  
Pei-Fang Yang ◽  
Jia-Min Guo ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Initial Growth ◽  
Very High Frequency ◽  
Very High
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