Regrown Source/Drain Based InGaAs MOSFET with Si3N4Nitride Spacer

Jiongjiong Mo; Xuran Zhao

doi:10.1149/2.0081610jss

Regrown Source/Drain Based InGaAs MOSFET with Si3N4Nitride Spacer

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0081610jss ◽

2016 ◽

Vol 5 (10) ◽

pp. Q257-Q259 ◽

Cited By ~ 1

Author(s):

Jiongjiong Mo ◽

Xuran Zhao

Keyword(s):

Ingaas Mosfet

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Delay Time Component of InGaAs MOSFET Caused by Dynamic Source Resistance

IEICE Transactions on Electronics ◽

10.1587/transele.e97.c.419 ◽

2014 ◽

Vol E97.C (5) ◽

pp. 419-422

Author(s):

Masayuki YAMADA ◽

Ken UCHIDA ◽

Yasuyuki MIYAMOTO

Keyword(s):

Delay Time ◽

Time Component ◽

Dynamic Source ◽

Source Resistance ◽

Ingaas Mosfet

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A TEM nanoanalytical investigation of Pd/Ge ohmic contacts for the miniaturization and optimization of n-InGaAs MOSFET devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/241/1/012037 ◽

2010 ◽

Vol 241 ◽

pp. 012037

Author(s):

P Longo ◽

W Jansen ◽

C Merckling ◽

J Penaud ◽

M Caymax ◽

...

Keyword(s):

Ohmic Contacts ◽

Ingaas Mosfet

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Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796705 ◽

2008 ◽

Cited By ~ 11

Author(s):

Jianqiang Lin ◽

Sungjoo Lee ◽

Hoon-Jung Oh ◽

Weifeng Yang ◽

G. Q. Lo ◽

...

Keyword(s):

High Mobility ◽

Gate Stack ◽

Ingaas Mosfet

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InGaAs MOSFET for High Power Applications

International Conference on Intelligent Computing and Smart Communication 2019 - Algorithms for Intelligent Systems ◽

10.1007/978-981-15-0633-8_136 ◽

2019 ◽

pp. 1389-1394

Author(s):

Manoj Singh Adhikari ◽

Vikalp Joshi ◽

Raju Patel

Keyword(s):

High Power ◽

Ingaas Mosfet

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Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

IEEE Electron Device Letters ◽

10.1109/led.2007.906436 ◽

2007 ◽

Vol 28 (11) ◽

pp. 935-938 ◽

Cited By ~ 161

Author(s):

Y. Xuan ◽

Y. Q. Wu ◽

H. C. Lin ◽

T. Shen ◽

Peide D. Ye

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

Enhancement Mode ◽

Ingaas Mosfet

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Impact of Strain Engineering on Nanoscale Strained InGaAs MOSFET Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.4341 ◽

2011 ◽

Vol 11 (7) ◽

pp. 5623-5627 ◽

Cited By ~ 1

Author(s):

Chang-Chun Lee ◽

Shu-Tong Chang ◽

P.-H. Sun ◽

C.-X. Huang

Keyword(s):

Strain Engineering ◽

Ingaas Mosfet

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Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics

2008 Device Research Conference ◽

10.1109/drc.2008.4800726 ◽

2008 ◽

Cited By ~ 2

Author(s):

T. D. Lin ◽

C. P. Chen ◽

H. C. Chiu ◽

P. Chang ◽

C. A. Lin ◽

...

Keyword(s):

Gate Dielectrics ◽

Inversion Channel ◽

Ingaas Mosfet

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Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

2013 International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2013.6562644 ◽

2013 ◽

Author(s):

Mikael Egard ◽

Mats Arlelid ◽

Lars Ohlsson ◽

B. Mattias Borg ◽

Erik Lind ◽

...

Keyword(s):

Frequency Modulation ◽

Ingaas Mosfet

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High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts.2018.8550836 ◽

2018 ◽

Cited By ~ 2

Author(s):

A. Tessmann ◽

A. Leuther ◽

F. Heinz ◽

F. Bernhardt ◽

H. Massler

Keyword(s):

High Gain ◽

20 Nm ◽

Ingaas Mosfet

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Vertical InGaAs-MOSFET with hetero-launcher and undoped channel

2009 IEEE International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2009.5012503 ◽

2009 ◽

Cited By ~ 1

Author(s):

H. Saito ◽

Y. Miyamoto ◽

K. Furuya

Keyword(s):

Ingaas Mosfet

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