HfO2/Al2O3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

2012 ◽  
Vol 1 (2) ◽  
pp. N10-N12 ◽  
Author(s):  
X.-F. Li ◽  
Y.-Q. Cao ◽  
A.-D. Li ◽  
H. Li ◽  
D. Wu
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Stacks ◽  
Equivalent Thickness ◽  
Small Capacitance

Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks

2020 ◽  
Vol 116 (22) ◽  
pp. 222104
Author(s):  
Takuma Doi ◽  
Shigehisa Shibayama ◽  
Wakana Takeuchi ◽  
Mitsuo Sakashita ◽  
Noriyuki Taoka ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Stacks

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks

2003 ◽  
Vol 83 (3) ◽  
pp. 533-535 ◽  
Author(s):  
R. J. Carter ◽  
E. Cartier ◽  
A. Kerber ◽  
L. Pantisano ◽  
T. Schram ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Stacks

High Permittivity Oxide Gate Stacks on Silicon Incorporating UHV Silicon Nitride Interfacial Layers

2001 ◽  
Vol 670 ◽  
Author(s):  
Mark A. Shriver ◽  
Ann M. Gabrys ◽  
T. K. Higman ◽  
S. A. Campbell
Keyword(s):  
Oxide Thickness ◽  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Equivalent Oxide Thickness ◽  
Gate Stacks ◽  
High Permittivity ◽  
Interfacial Layers ◽  
Thermal Nitridation

ABSTRACTCurrent high permittivity material deposition techniques produce a low permittivity oxide interfacial layer consequently increasing the equivalent oxide thickness. This interfacial oxide layer can be prevented by initially growing a thin nitride layer to act as a diffusion barrier. The interfacial nitride layer must also have low interface state densities comparable to state-of-the-art SiO2 insulators in order to be suitable for MOSFETs. The nitride layer used in this study was formed by thermal nitridation in a UHV system, with the subsequent high permittivity deposition done in an adjoining system. After forming capacitors from these films, capacitance vs. voltage (C-V) techniques were used to determine the interface state density and equivalent oxide thickness of the films. Gate stack films were produced on Si(100) and Si(111) and the results are compared. Gate stacks on Si(100) show a slight increase in stretchout in the high frequency C-V curves for both n-type and p-type samples. Initial data suggests that Si(111) has a lower interface state density than the Si(100) gate stacks. This may be attributed to the Si3N4layer on Si(111) being epitaxial nitride.

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

2009 ◽  
Vol 94 (18) ◽  
pp. 183102 ◽  
Author(s):  
Yasuhiro Oshima ◽  
Michael Shandalov ◽  
Yun Sun ◽  
Piero Pianetta ◽  
Paul C. McIntyre
Keyword(s):  
Hafnium Oxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Stacks ◽  
Capacitance Scaling

Extraction of interface state density in oxide/III–V gate stacks

2015 ◽  
Vol 30 (6) ◽  
pp. 065013 ◽  
Author(s):  
D Veksler ◽  
G Bersuker ◽  
H Madan ◽  
L Morassi ◽  
G Verzellesi
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Stacks

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

scholarly journals Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma Nitridation

2014 ◽  
Vol 778-780 ◽  
pp. 631-634 ◽  
Author(s):  
Yoshiyuki Akahane ◽  
Takuo Kano ◽  
Kyosuke Kimura ◽  
Hiroki Komatsu ◽  
Yukimune Watanabe ◽  
...  
Keyword(s):  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Process Temperature ◽  
Pure Nitrogen ◽  
Interface Property ◽  
Plasma Nitridation

A nitride layer was formed on a SiC surface by plasma nitridation using pure nitrogen as the reaction gas at the temperature from 800°C to 1400°C. The surface was characterized by XPS. The XPS measurement showed that an oxinitride layer was formed on the SiC surface by the plasma nitridation. The high process temperature seemed to be effective to activate the niridation reaction. A SiO2film was deposited on the nitridation layer to form SiO2/nitride/SiC structure. The interface state density of the SiO2/nitride/SiC structure was lower than that of the SiO2/SiC structure. This suggested that the nitridation was effective to improve the interface property.

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