Universal Band Gap Determination Model for Doped Semiconductor Materials

2015 ◽  
Vol 4 (12) ◽  
pp. P98-P101
Author(s):  
M. K. Mahata ◽  
S. Ghosh ◽  
S. Das ◽  
D. Biswas
Keyword(s):  
Band Gap ◽  
Semiconductor Materials

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

scholarly journals Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1621
Author(s):  
И.В. Боднарь ◽  
Б.Т. Чан ◽  
В.Н. Павловский ◽  
И.Е. Свитенков ◽  
Г.П. Яблонский
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Spinel Structure ◽  
Semiconductor Materials ◽  
Transmittance Spectra ◽  
Temperature Range

AbstractMnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials：properties, fabrication and applications

2021 ◽  
Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
Hot Spot ◽  
Wide Band ◽  
Aluminium Nitride ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Nitride Semiconductor ◽  
New Generation

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...

scholarly journals A COMPARATIVE ANALYSIS OF EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

2017 ◽  
Vol 18 (2) ◽  
pp. 151-157 ◽  
Author(s):  
Md. Abdullah Al Humayun ◽  
AHM Zahirul Alam ◽  
Sheroz Khan ◽  
MohamedFareq AbdulMalek ◽  
Mohd Abdur Rashid
Keyword(s):  
Comparative Analysis ◽  
Temperature Dependence ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gap Energy ◽  
Semiconductor Materials ◽  
Gap Energy ◽  
Einstein Model ◽  
S Model ◽  
Energy Dependent

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.

scholarly journals Defect mediated mechanism in undoped, Cu and Zn-doped TiO2 nanocrystals for tailoring the band gap and magnetic properties

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41994-42008 ◽  
Author(s):  
V. R. Akshay ◽  
B. Arun ◽  
Shubhra Dash ◽  
Ajit K. Patra ◽  
Guruprasad Mandal ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Band Gap ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Behavior ◽  
Semiconductor Materials ◽  
Magnetic Element ◽  
Tio2 Nanocrystals ◽  
Doped Tio2 ◽  
Cu And Zn

Oxide based dilute magnetic semiconductor materials are of great interest and this study focusses on the optical and magnetic behavior of non-magnetic element doped TiO2 nanocrystals which provides a significant reduction in bandgap with enhanced magnetization.

scholarly journals A Computer Simulation of Lithium Doped in nanosheet zinc oxide.

2021 ◽  
pp. 110-116
Author(s):  
Abdalla Abdelrahman Mohamed ◽  
Bedor Mohammed Khairalla
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Low Cost ◽  
Electronic Devices ◽  
Wide Band ◽  
Semiconductor Materials ◽  
High Resistivity ◽  
Oxide Surface ◽  
Half Metal ◽  
Good Agreement

The capabilities of computer through the methodologies of scientific computing used to solve many manufacturing difficulties of semiconductor materials, across all disciplines, because it is low cost and the availability of resources. In this paper, investigation of unique electronic property of zinc oxide sheet, which can be an attractive semiconductor material for many electronic devices applications, is carried out. The electronic structure of zinc oxide surface and the effect of substituting lithium atoms using CRYSTAL06 code showed that the bulk ZnO band gap ≈ 3.3eV which is in good agreement with experimental results≈3.4eV. After generating slab structure, the band gap has been increased to 5.5eV, exhibiting high resistivity surface. Substituting of lithium to slab has decreased band gap to 4.4eV. The results shows that there is reduction in band-gap and decreases in resistivity, predicting that Small amount of Lithium could change the zinc oxide from wide band semiconductor to half-metal compound.

scholarly journals Формирование двухфазной структуры в металлоорганическом перовските CH-=SUB=-3-=/SUB=-NH-=SUB=-3-=/SUB=-PbI-=SUB=-3-=/SUB=-

2020 ◽  
Vol 54 (6) ◽  
pp. 543
Author(s):  
Д.В. Амасев ◽  
В.Г. Михалевич ◽  
А.Р. Тамеев ◽  
Ш.Р. Саитов ◽  
А.Г. Казанский
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Phase Structure ◽  
Perovskite Structure ◽  
Relative Content ◽  
Semiconductor Materials ◽  
Lead Iodide ◽  
Two Phase ◽  
Annealing Conditions ◽  
Planar Structures

The effect of annealing of organometallic perovskite CH3NH3PbI3 film on its electrical, photoelectric, and optical properties is studied. It was shown that annealing at Та>140 °C leads to the two-phase structure formation consisting of perovskite and lead iodide, the relative content of which depends on the annealing conditions, in particular, on its temperature. The PbI2 formation in the perovskite structure leads to a decrease in the conductivity and photoconductivity of the material. Our studies indicate the possibility of forming planar structures consisting of semiconductor materials with various values of the band gap: 1.6 eV (CH3NH3PbI3) and 2.4 eV (PbI2).

Relationship Between Band Gap and Bulk Modulus of Semiconductor Materials

2012 ◽  
Vol 1 (1) ◽  
pp. 88-92 ◽  
Author(s):  
Keyan Li ◽  
Congying Kang ◽  
Dongfeng Xue
Keyword(s):  
Bulk Modulus ◽  
Band Gap ◽  
Semiconductor Materials
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