Factors Affecting Light Emission from Solid State Incandescent Light Emitting Devices with Sputter Deposited Zr-Doped HfO2Thin Films

2014 ◽  
Vol 3 (10) ◽  
pp. Q182-Q189 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Solid State ◽  
Light Emission ◽  
Factors Affecting ◽  
Light Emitting ◽  
Incandescent Light ◽  
Light Emitting Devices ◽  
Sputter Deposited

scholarly journals Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices

MRS Advances ◽  
2020 ◽  
Vol 5 (39) ◽  
pp. 2033-2041
Author(s):  
Abhinav Shukla ◽  
Yue Kuo ◽  
Tyler W. Kuo
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Emission Spectra ◽  
Thermal Excitation ◽  
Light Emitting ◽  
Incandescent Light ◽  
Light Emitting Devices ◽  
Si Thin Film

AbstractIn this paper, the light emission phenomena over solid-state incandescent light emitting devices have been modelled based on Planck's law of blackbody radiation. The emission spectra from the thermal excitation of nano-resistors with and without inclusion of an Indium Tin Oxide (ITO) or amorphous silicon (a-Si) thin film filter is simulated and compared with those measured from actual devices. The simulated emission spectra are further utilized to study the light characteristics for SSI-LED with ITO, a-Si and polycrystalline silicon (poly-Si) thin film filters.

Silicate conductive filament assisted broadband light emission of HfO2 high-k solid state incandescent devices

2018 ◽  
Vol 6 (29) ◽  
pp. 7913-7919 ◽  
Author(s):  
Yiwei Liu ◽  
Gang Niu ◽  
Can Yang ◽  
Shengli Wu ◽  
Liyan Dai ◽  
...  
Keyword(s):  
Solid State ◽  
Light Emission ◽  
Conductive Filament ◽  
Promising Candidate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High K

High-k material based solid state incandescent devices (SSI-LEDs) have attracted intense attention as a promising candidate for future broadband light emitting devices.

Non-linear light emission of inorganic protonic diodes, H+LEDs

2021 ◽  
Vol 9 (9) ◽  
pp. 3052-3057
Author(s):  
Jerzy J. Langer ◽  
Ewelina Frąckowiak
Keyword(s):  
Light Emission ◽  
Stimulated Raman Scattering ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Light Pulses ◽  
Optical Effects ◽  
Non Linear ◽  
Intense Light ◽  
Light Beams ◽  
Intense Light Pulses

H+LEDs are light emitting devices based on a protonic p–n junction; now with no organic polymers. The unique are non-linear optical effects: collimated light beams and stimulated Raman scattering (SRS), observed while generating intense light pulses.

Photoluminescence Properties of Ca3Si2O7: Pr3+ Orange-Red Phosphors Prepared by High-Temperature Solid-State Method

2018 ◽  
Vol 73 (6) ◽  
pp. 555-558 ◽  
Author(s):  
Zhi-Qing Peng ◽  
Rong Chen ◽  
Wen-Lin Feng
Keyword(s):  
Crystal Structure ◽  
High Temperature ◽  
Solid State ◽  
Solid State Method ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Red Phosphors ◽  
Typical Sample ◽  
State Method ◽  
Xrd Patterns

AbstractNovel luminescent materials Ca3-xSi2O7: xPr3+ were successfully prepared by the high-temperature solid-state method. The crystal structure, morphology, and optical spectrum were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectroscopy, respectively. The XRD patterns of the samples indicate that the crystal structure is monoclinic symmetry. The SEM shows that the selected sample has good crystallinity although its appearance is irregular and scalelike. The peak of the excitation spectrum of the sample is located at around 449 nm, corresponding to 3H4→3P2 transition of Pr3+. The peak of the emission spectrum of the sample is situated at around 612 nm which is attributed to 3P0→3H6 transition of Pr3+, and the colour is orange-red. The optimum concentration for Pr3+ replaced Ca2+ sites in Ca3Si2O7: Pr3+ is 0.75 mol%. The lifetime (8.48 μs) of a typical sample (Ca2.9925Pr0.0075)Si2O7 is obtained. It reveals that orange-red phosphors Ca3-xSi2O7: xPr3+ possess remarkable optical properties and can be used in white light emitting devices.

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