Deposition of Nanostructured Ag Films on Silicon Wafers by Electrochemical/Electrophoretic Deposition for Electrochemical and SERS Sensing

2013 ◽  
Vol 160 (4) ◽  
pp. B54-B59 ◽  
Author(s):  
Vladimir Halouzka ◽  
Petr Jakubec ◽  
Libor Kvitek ◽  
Vlassis Likodimos ◽  
Athanassios G. Kontos ◽  
...  
Keyword(s):  
Electrophoretic Deposition ◽  
Silicon Wafers ◽  
Sers Sensing

scholarly journals Infeed Grinding of Silicon Wafers Applying Electrophoretic Deposition of Ultrafine Abrasives.

1998 ◽  
Vol 64 (625) ◽  
pp. 3650-3654
Author(s):  
Yasuhiro TANI ◽  
Tatsuhiko SAEKI ◽  
Yamato SAMITSU ◽  
Kazuo KOBAYASHI ◽  
Yoshiyuki SATO
Keyword(s):  
Electrophoretic Deposition ◽  
Silicon Wafers

Electrophoretic Deposition of Bilayer Based on Sacrificial Titanium Dioxide and Lead Zirconate Titanate on Bare Silicon Wafer

2015 ◽  
Vol 654 ◽  
pp. 132-135
Author(s):  
Pietro Galizia ◽  
Carmen Galassi
Keyword(s):  
Titanium Dioxide ◽  
Relative Density ◽  
Silicon Wafer ◽  
Lead Zirconate Titanate ◽  
Electrophoretic Deposition ◽  
Lead Zirconate ◽  
Sem Analysis ◽  
Silicon Wafers ◽  
Semiconductor Substrate ◽  
Zirconate Titanate

Bilayer thick films of sacrificial titanium dioxide and Nb-doped lead zirconate titanate (PZTN) have been deposited on bare silicon wafers using electrophoretic deposition (EPD) technique. Deposition of such ceramic particles, dispersed ethanol-based suspensions, on semiconductor substrate has been made possible after preparation of alloyed junctions Al/Si characterized by ohmic behaviour. Sintering of green TiO2/PZTN films was performed at 900 °C for 1 h. The composition of the films, the thickness and relative density of the deposited materials have been analysed by EDS-SEM analysis. The lead diffusion through the silicon wafer has been reduced.

Infeed Grinding of Silicon Wafers Applying Electrophoretic Deposition of Ultrafine Abrasives

CIRP Annals ◽  
1998 ◽  
Vol 47 (1) ◽  
pp. 245-248 ◽  
Author(s):  
Y. Tani ◽  
T. Saeki ◽  
Y. Samitsu ◽  
K. Kobayashi ◽  
Y. Sato
Keyword(s):  
Electrophoretic Deposition ◽  
Silicon Wafers

Characteristics of Electrophoretic Deposition-Assisted Polishing Using Bamboo Charcoal

2014 ◽  
Vol 575 ◽  
pp. 264-267
Author(s):  
Hsin Min Lee ◽  
Kun Ling Wu
Keyword(s):  
Surface Roughness ◽  
Surface Quality ◽  
Electrophoretic Deposition ◽  
Rotational Speed ◽  
Silicon Wafers ◽  
High Porosity ◽  
Bamboo Charcoal ◽  
Experimental Setting ◽  
Machining Time ◽  
Best Parameter

This study examines the feasibility of using high-porosity and conductive bamboo charcoal in electrophoretic deposition (EPD)-assisted polishing of silicon wafers and explored the influence of various parameters on surface roughness. EPD-assisted polishing with bamboo charcoal offers an alternative to the lapping process prior to CMP. According to the results, the best parameter combination obtained under the current experimental setting is machining time, 12 min; rotational speed of platen, 75 rpm; and voltage, 6V. EPD indeed contributes to more effective and efficient polishing, with better surface quality attained within a shorter machining time.

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Low temperature drive-in of surface-deposited copper in silicon wafers

2004 ◽  
Vol 27 (1-3) ◽  
pp. 435-438 ◽  
Author(s):  
M. L. Polignano ◽  
D. Caputo ◽  
C. Carpanese ◽  
G. Salvà ◽  
L. Vanzetti
Keyword(s):  
Low Temperature ◽  
Silicon Wafers

The mechanism of electrophoretic deposition

1965 ◽  
Vol 15 (1) ◽  
pp. 40-48
Author(s):  
D. R. Brown ◽  
F. W. Salt
Keyword(s):  
Electrophoretic Deposition

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline
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