scholarly journals Editors' Choice Communication—Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide Electrolytes

2016 ◽  
Vol 5 (9) ◽  
pp. Q219-Q221
Author(s):  
Seokjae Lim ◽  
Jiyong Woo ◽  
Sangheon Lee ◽  
Jaesung Park ◽  
Hyunsang Hwang
Keyword(s):  
Switching Device ◽  
Metal Filament

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals Analysis of docking tolerance capability of underwater tool-switching device

2021 ◽  
Vol 1748 ◽  
pp. 062045
Author(s):  
Haixia Gong ◽  
Wei Tang ◽  
Bowen Tan ◽  
Liquan Wang
Keyword(s):  
Switching Device ◽  
Tool Switching

scholarly journals Electrical read-out of light-induced spin transition in thin film spin crossover/graphene heterostructures

2021 ◽  
Author(s):  
Nikita Konstantinov ◽  
Arthur Tauzin ◽  
Ulrich Nguetchuissi Noumbé ◽  
Diana Dragoe ◽  
Bohdan Kundys ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Crossover ◽  
Spin Transition ◽  
Switching Device ◽  
Electronic Switching ◽  
Spin Transitions

An opto-electronic switching device made from an evaporated spin crossover thin film over a graphene sensor is presented. The electrical transduction of both temperature and light-induced reversible spin transitions are demonstrated.

Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory

2007 ◽  
Vol 111 (27) ◽  
pp. 7756-7760 ◽  
Author(s):  
Won-Jae Joo ◽  
Tae-Lim Choi ◽  
Kwang-Hee Lee ◽  
Youngsu Chung
Keyword(s):  
Threshold Behavior ◽  
Metal Filament ◽  
Polymer Memory

OPTICAL SENSING AND SWITCHING DEVICE BASED ON A FINITE DEEP NONLINEAR BRAGG GRATING WITH A MIRROR

2005 ◽  
Vol 14 (02) ◽  
pp. 259-272 ◽  
Author(s):  
H. ALATAS ◽  
A. A. ISKANDAR ◽  
M. O. TJIA ◽  
T. P. VALKERING
Keyword(s):  
Light Source ◽  
Optical Sensing ◽  
Laser Source ◽  
Bragg Grating ◽  
Continuous Laser ◽  
Switching Device ◽  
Metallic Mirror

We investigate the detailed transition of the dark to antidark soliton-like states in a system of finite deep nonlinear Bragg grating equipped with a movable metallic mirror and illuminated by a continuous laser source. As reported previously, the transition can be induced mechanically by moving the mirror as well as optically by changing the light source intensity.

Sign in / Sign up

Export Citation Format

Share Document