Perovskite Single Crystals for Energy Conversion of Solar Radiation

2021 ◽  
Vol 105 (1) ◽  
pp. 261-267
Author(s):  
Stevan Gavranović ◽  
Jan Pospisil ◽  
Vitezslav Novak ◽  
Petr Vanysek

Experimental part describes synthesis, structural and optical properties of MAPbBr3 single crystals and electrical characterization of the Au/MAPbBr3/Au light-sensitive assembly. Its parameters (responsivity, external quantum efficiency and specific detectivity) are calculated based on the spectral and switching (on/off) current responses. The material is further discussed as a detector and a possible active component for photovoltaic panels.

1991 ◽  
Vol 126 (2) ◽  
pp. 437-442 ◽  
Author(s):  
G. Micocci ◽  
A. Tepore ◽  
R. Rella ◽  
P. Siciliano

2004 ◽  
Vol 89 (3) ◽  
pp. 293-296 ◽  
Author(s):  
B Boudine ◽  
M Sebais ◽  
O Halimi ◽  
H Alliouche ◽  
A Boudrioua ◽  
...  

1987 ◽  
Vol 104 (2) ◽  
pp. K93-K96 ◽  
Author(s):  
B. Vengatesan ◽  
N. Kanniah ◽  
P. Ramasamy

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.


1996 ◽  
Vol 458 ◽  
Author(s):  
Takeshi Harada ◽  
Yoshinobu Nakamura ◽  
Akira Kishimoto ◽  
Naobumi Motohira ◽  
Hiroaki Yanagida

ABSTRACTZinc oxide (ZnO) single crystals are grown by the traditional chemical vapor reaction method and ZnO crystal pairs with a single boundary are successfully obtained. The obtained specimens with one ZnO–ZnO boundary (ZnO homojunction) show nonlinear current-voltage (I–V) characteristics without the addition of Bi2O3, CoO, MnO2, and/or rare earth metal oxides. A specimen with higher breakdown voltage shows superior nonlinearity with negative resistivity in its I–V characteristics. Electrical characterization of the ZnO homojunction is conducted and extremely slow response with the current (or voltage) stress is confirmed. The phenomenon had never been observed in commercial ZnO varistors. The surface temperature of the ZnO homojunction is enhanced by larger applied current. The effect of the Joule heat on the nonlinearity in the I–V curves of the ZnO homojunction is discussed.


2010 ◽  
Vol 87 (1) ◽  
pp. 76-83 ◽  
Author(s):  
Mario Rodríguez ◽  
Gabriel Ramos-Ortíz ◽  
Martha I. Alcalá-Salas ◽  
José Luis Maldonado ◽  
Karla A. López-Varela ◽  
...  

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