Effects of the Substrate on Piezoresistive Properties of Silicon Carbide Thin Films

2019 ◽  
Vol 44 (1) ◽  
pp. 1375-1380 ◽  
Author(s):  
Mariana A. Fraga ◽  
Humber Furlan ◽  
Luiz A. Rasia ◽  
Leandro L. Koberstein
Keyword(s):  
Thin Films ◽  
Silicon Carbide

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Deposition of Thin Films of Silicon Carbide on Fused Quartz and on Sapphire by Laser Ablation of Ceramic Silicon Carbide Targets

1992 ◽  
Vol 285 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
J. Hangas ◽  
E. M. Loaothetis ◽  
Nayef Abu-ageel ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Fused Silica ◽  
High Resistivity ◽  
Fused Quartz ◽  
Amorphous Sic ◽  
Very High

ABSTRACTAblation of ceramic silicon carbide with 351 nm excimer radiation was used to depositSIC films on fused silica and on sapphire. For deposition temperatures above 850° C, diffraction shows the films to be crystalline with the [111] axis preferentially oriented normally to the film. Optical spectra show an indirect energy gap at 2.2 eV, near that for the cubic polytype, although the 200 diffractions are absent. Room temperature resistivities range between .02 to .1 Ωcm. Deposition below 600° C yields amorphous SiC with no diffraction bands, low and variable optical band gap and very high resistivity.

Characterisation of silicon carbide and silicon nitride thin films and Si3N4/SiC multilayers

2002 ◽  
Vol 11 (3-6) ◽  
pp. 1248-1253 ◽  
Author(s):  
M. Lattemann ◽  
S. Ulrich ◽  
H. Holleck ◽  
M. Stüber ◽  
H. Leiste
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Silicon Nitride
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