Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

2019 ◽  
Vol 41 (7) ◽  
pp. 239-248 ◽  
Author(s):  
Benjamin Vincent ◽  
Federica Gencarelli ◽  
Denis Lin ◽  
Laura Nyns ◽  
Olivier Richard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Uniaxial Compressive Stress

scholarly journals Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Multi Quantum Well

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Reduced Pressure ◽  
Pressure Chemical

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

2016 ◽  
Vol 602 ◽  
pp. 24-28
Author(s):  
Yuji Yamamoto ◽  
Naofumi Ueno ◽  
Masao Sakuraba ◽  
Junichi Murota ◽  
Andreas Mai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Delta Doping ◽  
Pressure Chemical
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