A Drain Current - Drain Voltage Relation for MOSFETs with High-k Gate Stacks

2019 ◽  
Vol 41 (3) ◽  
pp. 389-400
Author(s):  
S. Kar
Keyword(s):  
Drain Current ◽  
Drain Voltage ◽  
Gate Stacks ◽  
High K ◽  
Current Drain

Effects of Area Ratio on the Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect-Transistors (MFMIS FETs)

2019 ◽  
Vol 201 (1) ◽  
pp. 183-191
Author(s):  
Jing Sun ◽  
Yanping Li ◽  
Lei Cao ◽  
Jiaoyun Liu ◽  
Xiaorong Shi ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Drain Current ◽  
Area Ratio ◽  
Drain Voltage ◽  
Double Integral ◽  
Metal Insulator ◽  
Polarization Voltage ◽  
Ferroelectric Layer ◽  
Capacitance Voltage ◽  
Current Drain

The switching physics of ferroelectric, series capacitance theory and Pao and Sah’s double integral are used for describing the polarization-voltage (P-V) characteristic of ferroelectric layer, capacitance-voltage (C-V) characteristic of MFMIS capacitor, and drain current-gate voltage (ID-VGS) and drain current-drain voltage (ID-VDS) characteristics of MFMIS FET. The effects of the area ratio on the P-V, C-V, ID-VGS, and ID-VDS characteristics are discussed. The results indicate that with the increase of the area ratio, the P-V characteristic, memory windows of C-V and ID-VGS characteristics become saturated, while the drain current ON/OFF ratio and applied voltage for saturated memory window decrease.

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

2019 ◽  
Vol 19 (2) ◽  
pp. 87-99 ◽  
Author(s):  
Felice Crupi ◽  
Paolo Magnone ◽  
Eddy Simoen ◽  
Luigi Pantisano ◽  
Gino Giusi ◽  
...  
Keyword(s):  
Gate Stacks ◽  
High K

Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

2012 ◽  
Vol 51 ◽  
pp. 081303 ◽  
Author(s):  
Shinya Hibino ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K
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