Effects of Post-Deposition Annealing Atmosphere and Duration on Sol-Gel Derived Amorphous Indium-Zinc-Oxide Thin-Film Transistors
2016 ◽
Vol 16
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pp. 12871-12874
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pp. 088506
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2019 ◽
Vol 30
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pp. 12929-12936
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pp. 642-646
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Vol 31
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pp. 440-442
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