Alpha Radiation Incidence Angle Influence on Planar FDSOI nMOSFET

2019 ◽  
Vol 39 (1) ◽  
pp. 85-92
Author(s):  
Robson A. Magalhães ◽  
Paula G. Agopian ◽  
Marcilei A. Silveira ◽  
Renato C. Giacomini
Keyword(s):  
Incidence Angle ◽  
Alpha Radiation ◽  
Radiation Incidence

scholarly journals Method for fast determination of the angle of ionizing radiation incidence from data measured by a Timepix3 detector

2021 ◽  
Vol 10 (1) ◽  
pp. 63-70
Author(s):  
Felix Lehner ◽  
Jürgen Roth ◽  
Oliver Hupe ◽  
Marc Kassubeck ◽  
Benedikt Bergmann ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Incidence Angle ◽  
Computation Time ◽  
Incident Radiation ◽  
Angle Of Incidence ◽  
Time Behavior ◽  
Calculation Algorithm ◽  
3D Geometry ◽  
Photon Event ◽  
Radiation Incidence

Abstract. This paper presents a method of how to determine spatial angles of ionizing radiation incidence quickly, using a Timepix3 detector. This work focuses on the dosimetric applications where detectors and measured quantities show significant angle dependencies. A determined angle of incidence can be used to correct for the angle dependence of a planar Timepix3 detector. Up until now, only passive dosemeters have been able to provide a correct dose and preserve the corresponding incidence angle of the radiation. Unfortunately, passive dosemeters cannot provide this information in “real” time. In our special setup we were able to retrieve the spatial angles with a runtime of less than 600 ms. Employing the new Timepix3 detector enables the use of effective data analysis where the direction of incident radiation is computed from a simple photon event map. In order to obtain this angle, we combine the information extracted from the map with known 3D geometry surrounding the detector. Moreover, we analyze the computation time behavior, conditions and optimizations of the developed spatial angle calculation algorithm.

A Method for Determining Detector Efficiencies In-Situ by Variation of the Radiation Incidence Angle

1990 ◽  
Vol 122 (2) ◽  
pp. 695-704 ◽  
Author(s):  
J. Wernisch ◽  
A. Schönthaler ◽  
H.-J. August
Keyword(s):  
Incidence Angle ◽  
Radiation Incidence

Electron Channeling Patterns

1977 ◽  
Vol 35 ◽  
pp. 12-13
Author(s):  
David C. Joy
Keyword(s):  
Electron Diffraction ◽  
Incidence Angle ◽  
Photographic Plate ◽  
Diffraction Effect ◽  
Angle Of Incidence ◽  
Bulk Single Crystal ◽  
Time Resolved ◽  
Electron Channeling ◽  
Spatially Resolved ◽  
Large Bulk

Electron channeling patterns (ECP) were first found by Coates (1967) while observing a large bulk, single crystal of silicon in a scanning electron microscope. The geometric pattern visible was shown to be produced as a result of the changes in the angle of incidence, between the beam and the specimen surface normal, which occur when the sample is examined at low magnification (Booker, Shaw, Whelan and Hirsch 1967).A conventional electron diffraction pattern consists of an angularly resolved intensity distribution in space which may be directly viewed on a fluorescent screen or recorded on a photographic plate. An ECP, on the other hand, is produced as the result of changes in the signal collected by a suitable electron detector as the incidence angle is varied. If an integrating detector is used, or if the beam traverses the surface at a fixed angle, then no channeling contrast will be observed. The ECP is thus a time resolved electron diffraction effect. It can therefore be related to spatially resolved diffraction phenomena by an application of the concepts of reciprocity (Cowley 1969).

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Principle and practice of high-resolution imaging with a field-emission TEM

1992 ◽  
Vol 50 (1) ◽  
pp. 138-139
Author(s):  
Max T. Otten ◽  
Wim M.J. Coene
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Incidence Angle ◽  
Temporal Coherence ◽  
Energy Spread ◽  
High Resolution Imaging ◽  
Major Improvement ◽  
High Resolution Images ◽  
Resolution Imaging

High-resolution imaging with a LaB6 instrument is limited by the spatial and temporal coherence, with little contrast remaining beyond the point resolution. A Field Emission Gun (FEG) reduces the incidence angle by a factor 5 to 10 and the energy spread by 2 to 3. Since the incidence angle is the dominant limitation for LaB6 the FEG provides a major improvement in contrast transfer, reducing the information limit to roughly one half of the point resolution. The strong improvement, predicted from high-resolution theory, can be seen readily in diffractograms (Fig. 1) and high-resolution images (Fig. 2). Even if the information in the image is limited deliberately to the point resolution by using an objective aperture, the improved contrast transfer close to the point resolution (Fig. 1) is already worthwhile.

Resistance against PSMA-targeting alpha-radiation therapy coincides with mutations in DNA-repair associated genes

2019 ◽  
Author(s):  
C Kratochwil ◽  
CP Heussel ◽  
F Bruchertseifer ◽  
U Haberkorn ◽  
A Morgenstern ◽  
...  
Keyword(s):  
Dna Repair ◽  
Radiation Therapy ◽  
Alpha Radiation
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