Growth-Direction Dependent Rapid-Melting-Growth of Ge-On-Insulator (GOI) and its Application to Ge Mesh-Growth

2019 ◽  
Vol 35 (5) ◽  
pp. 55-60
Author(s):  
Hiroyki Yokoyama ◽  
Yasuharu Ohta ◽  
Kaoru Toko ◽  
Taizoh Sadoh ◽  
Masanobu Miyao
Keyword(s):  
Growth Direction ◽  
Rapid Melting

scholarly journals Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth

2010 ◽  
Vol 97 (15) ◽  
pp. 152101 ◽  
Author(s):  
Kaoru Toko ◽  
Takanori Tanaka ◽  
Yasuharu Ohta ◽  
Taizoh Sadoh ◽  
Masanobu Miyao
Keyword(s):  
Growth Direction ◽  
Rapid Melting

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

The limits of strain and lattice parameter measurements by CBED

1989 ◽  
Vol 47 ◽  
pp. 518-519
Author(s):  
Hamish L. Fraser
Keyword(s):  
Electron Beam ◽  
Mirror Symmetry ◽  
Local Symmetry ◽  
Lattice Parameter ◽  
Growth Direction ◽  
Surface Relaxation ◽  
Strained Layer ◽  
Axis Parallel ◽  
Local Lattice ◽  
Strained Layer Superlattice

The topic of strain and lattice parameter measurements using CBED is discussed by reference to several examples. In this paper, only one of these examples is referenced because of the limitation of length. In this technique, scattering in the higher order Laue zones is used to determine local lattice parameters. Work (e.g. 1) has concentrated on a model strained-layer superlattice, namely Si/Gex-Si1-x. In bulk samples, the strain is expected to be tetragonal in nature with the unique axis parallel to [100], the growth direction. When CBED patterns are recorded from the alloy epi-layers, the symmetries exhibited by the patterns are not tetragonal, but are in fact distorted from this to lower symmetries. The spatial variation of the distortion close to a strained-layer interface has been assessed. This is most readily noted by consideration of Fig. 1(a-c), which show enlargements of CBED patterns for various locations and compositions of Ge. Thus, Fig. 1(a) was obtained with the electron beam positioned in the center of a 5Ge epilayer and the distortion is consistent with an orthorhombic distortion. When the beam is situated at about 150 nm from the interface, the same part of the CBED pattern is shown in Fig. 1(b); clearly, the symmetry exhibited by the mirror planes in Fig. 1 is broken. Finally, when the electron beam is positioned in the center of a 10Ge epilayer, the CBED pattern yields the result shown in Fig. 1(c). In this case, the break in the mirror symmetry is independent of distance form the heterointerface, as might be expected from the increase in the mismatch between 5 and 10%Ge, i.e. 0.2 to 0.4%, respectively. From computer simulation, Fig.2, the apparent monocline distortion corresponding to the 5Ge epilayer is quantified as a100 = 0.5443 nm, a010 = 0.5429 nm and a001 = 0.5440 nm (all ± 0.0001 nm), and α = β = 90°, γ = 89.96 ± 0.02°. These local symmetry changes are most likely due to surface relaxation phenomena.

Effects of Initial Nucleation Condition at the Start Block on the Grain Size and Growth Direction in Directionally Solidified CM247LC Superalloy

2011 ◽  
Vol 49 (01) ◽  
pp. 58-63
Author(s):  
Hye-Young Yoon ◽  
Je-Hyun Lee ◽  
Hyeong-Min Jung ◽  
Seong-Moon Seo ◽  
Chang-Young Jo ◽  
...  
Keyword(s):  
Grain Size ◽  
Growth Direction ◽  
Directionally Solidified ◽  
Initial Nucleation

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

An Alternative Technique to Evaluate Crack Propagation Path in Hyperelastic Materials

2012 ◽  
Vol 40 (1) ◽  
pp. 42-58 ◽  
Author(s):  
R. R. M. Ozelo ◽  
P. Sollero ◽  
A. L. A. Costa
Keyword(s):  
Constitutive Model ◽  
Crack Propagation ◽  
Experimental Tests ◽  
Growth Direction ◽  
Propagation Path ◽  
J Integral ◽  
Alternative Technique ◽  
Crack Propagation Path ◽  
Hyperelastic Materials ◽  
Material Constitutive Model

Abstract REFERENCE: R. R. M. Ozelo, P. Sollero, and A. L. A. Costa, “An Alternative Technique to Evaluate Crack Propagation Path in Hyperelastic Materials,” Tire Science and Technology, TSTCA, Vol. 40, No. 1, January–March 2012, pp. 42–58. ABSTRACT: The analysis of crack propagation in tires aims to provide safety and reliable life prediction. Tire materials are usually nonlinear and present a hyperelastic behavior. Therefore, the use of nonlinear fracture mechanics theory and a hyperelastic material constitutive model are necessary. The material constitutive model used in this work is the Mooney–Rivlin. There are many techniques available to evaluate the crack propagation path in linear elastic materials and estimate the growth direction. However, most of these techniques are not applicable to hyperelastic materials. This paper presents an alternative technique for modeling crack propagation in hyperelastic materials, based in the J-Integral, to evaluate the crack path. The J-Integral is an energy-based parameter and is applicable to nonlinear materials. The technique was applied using abaqus software and compared to experimental tests.

scholarly journals Electrically turning periodic structures in cholesteric layer with conical–planar boundary conditions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Oxana Prishchepa ◽  
Mikhail Krakhalev ◽  
Vladimir Rudyak ◽  
Vitaly Sutormin ◽  
Victor Zyryanov
Keyword(s):  
Boundary Conditions ◽  
Periodic Structures ◽  
Cholesteric Liquid Crystal ◽  
Growth Direction ◽  
Smooth Transition ◽  
Defect Structures ◽  
Optical Cell ◽  
Elastic Continuum ◽  
The One ◽  
Experimental Findings

AbstractElectro-optical cell based on the cholesteric liquid crystal is studied with unique combination of the boundary conditions: conical anchoring on the one substrate and planar anchoring on another one. Periodic structures in cholesteric layer and their transformation under applied electric field are considered by polarizing optical microscopy, the experimental findings are supported by the data of the calculations performed using the extended Frank elastic continuum approach. Such structures are the set of alternating over- and under-twisted defect lines whose azimuthal director angles differ by $$180^\circ$$ 180 ∘ . The $$U^+$$ U + and $$U^-$$ U - -defects of periodicity, which are the smooth transition between the defect lines, are observed at the edge of electrode area. The growth direction of defect lines forming a diffraction grating can be controlled by applying a voltage in the range of $$0\le \, V \le 1.3$$ 0 ≤ V ≤ 1.3  V during the process. Resulting orientation and distance between the lines don’t change under voltage. However, at $$V>1.3$$ V > 1.3  V $$U^+$$ U + -defects move along the defect lines away from the electrode edges, and, finally, the grating lines collapse at the cell’s center. These results open a way for the use of such cholesteric material in applications with periodic defect structures where a periodicity, orientation, and configuration of defects should be adjusted.

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