Improvement on Electrical Characteristics of HfO2 MIS Capacitor with Dual Plasma Treatment

2019 ◽  
Vol 35 (2) ◽  
pp. 309-316
Author(s):  
Kow-Ming Chang ◽  
Ting-Chia Chang ◽  
Hshu-Wei Chen
Keyword(s):  
Plasma Treatment ◽  
Electrical Characteristics ◽  
Mis Capacitor

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Reliability Properties and Current Conduction Mechanisms of HfO2 MIS Capacitor with Dual Plasma Treatment

2019 ◽  
Vol 35 (4) ◽  
pp. 909-921 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ting-Chia Chang ◽  
Shou-Hsien Chen ◽  
I-Chung Deng
Keyword(s):  
Plasma Treatment ◽  
Conduction Mechanisms ◽  
Current Conduction ◽  
Mis Capacitor

Improvement of Electrical Characteristics in SPC-Si TFT Employing H2 Plasma Treatment

2019 ◽  
Vol 16 (9) ◽  
pp. 201-206
Author(s):  
Sang-Geun Park ◽  
Sun-Jae Kim ◽  
Jeong-Soo Lee ◽  
Chang-Yeon Kim ◽  
M. -K. Han
Keyword(s):  
Plasma Treatment ◽  
Electrical Characteristics

Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes

2016 ◽  
Vol 69 (8) ◽  
pp. 1321-1327
Author(s):  
V. Janardhanam ◽  
I. Jyothi ◽  
Shim-Hoon Yuk ◽  
Chel-Jong Choi ◽  
Sung-Nam Lee ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Schottky Diodes ◽  
Oxygen Plasma Treatment ◽  
Electrical Characteristics ◽  
Effect Of Oxygen
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