Dye-Sensitized Hole Injection at p-type III-V Electrode Interfaces

2019 ◽  
Vol 35 (8) ◽  
pp. 153-163 ◽  
Author(s):  
Michelle Price ◽  
Stephen Maldonado
Keyword(s):  
Hole Injection ◽  
Type Iii ◽  
Dye Sensitized ◽  
P Type

INVESTIGATION OF DYE-REGENERATION KINETICS AT DYE-SENSITIZED p-TYPE CuCrO2 FILM/ELECTROLYTES INTERFACE WITH SCANNING ELECTROCHEMICAL MICROSCOPY

NANO ◽  
2014 ◽  
Vol 09 (05) ◽  
pp. 1440008 ◽  
Author(s):  
GETACHEW ALEMU ◽  
BINGYAN ZHANG ◽  
JUNPENG LI ◽  
XIAOBAO XU ◽  
JIN CUI ◽  
...  
Keyword(s):  
Dye Sensitized Solar Cells ◽  
Scanning Electrochemical Microscopy ◽  
Hole Injection ◽  
Kinetic Rate Constant ◽  
Dye Sensitized ◽  
Mesoporous Film ◽  
Dye Regeneration ◽  
P Type ◽  
Kinetics Of ◽  
Electrochemical Microscopy

The power conversion efficiency of p-type dye-sensitized solar cells (DSSC) is determined by the kinetics of hole injection and dye-regeneration reaction at the dye/electrolyte interface. In this work, the photochemical regeneration kinetics of dye adsorbed on CuCrO 2 mesoporous film was investigated by using scanning electrochemical microscopy with feedback mode. Organic P1 and C343 sensitizers in combination with iodide-based and thiolate-based electrolytes were selected to understand the effect of sensitizers and redox shuttles on dye-regeneration process. A fast regeneration kinetic rate constant was confirmed in thiolate-based sample compared with iodide-based electrolyte, indicating that the organic redox shuttle was an efficient mediator to optimize the performance of p-type DSSC.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Fabrication of copper‐niobium‐oxygen complexes as a photocathode for p‐type dye‐sensitized solar cell

2021 ◽  
Author(s):  
Priyadarshani Narayanasamy ◽  
Sabari Girisun Chidambaram ◽  
Mathankumar Mahendran ◽  
Subhendu K Panda ◽  
Subramanian Balasubramanian
Keyword(s):  
Solar Cell ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type ◽  
Oxygen Complexes

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

A p-Type NiO-Based Dye-Sensitized Solar Cell with an Open-Circuit Voltage of 0.35 V

2009 ◽  
Vol 48 (24) ◽  
pp. 4402-4405 ◽  
Author(s):  
Elizabeth A. Gibson ◽  
Amanda L. Smeigh ◽  
Loïc Le Pleux ◽  
Jérôme Fortage ◽  
Gerrit Boschloo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized ◽  
P Type
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