Fabrication and Quantum Confinement Investigation of Ge Multiple Quantum Wells with Si3N4 Barriers

2019 ◽  
Vol 34 (1) ◽  
pp. 1135-1143
Author(s):  
Jian Chen ◽  
Sammy Lee ◽  
Shujuan Huang
2007 ◽  
Vol 06 (05) ◽  
pp. 315-318 ◽  
Author(s):  
A. A. KOVALYOV ◽  
O. P. PCHELYAKOV ◽  
V. V. PREOBRAZHENSKII ◽  
M. M. PUTYATO ◽  
N. N. RUBTSOVA ◽  
...  

MBE growth of GaSb / InGaAsSb / GaSb heterostructures of high crystal quality is performed under continual RHEED control. Transmission spectra of the films forming multiple quantum wells in λ ≈ 2–3 μm region confirm possibility to control optical properties of the structures through quantum confinement and through the content of semiconductor elements. New design of saturable absorption semiconductor mirror (SESAM) for Cr 2+: ZnSe laser is proposed and manufactured on the base of the single quantum well GaSb / InGaAsSb / GaSb placed between dielectric antireflection and broadband high reflection coatings.


1993 ◽  
Vol 32 (S3) ◽  
pp. 408
Author(s):  
Yutaka Takeuchi ◽  
Koji Ando ◽  
Hiroyuki Akinaga ◽  
Takashi Abe ◽  
Hiroshi Yamamoto

2008 ◽  
Vol 19 (11) ◽  
pp. 1635-1645
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT

We present an efficient method to calculate the quantum-confinement energy of charge carriers in the ( ZnSe )M( CdSe )N (001) multiple quantum wells (MQW). The method is based on the 3D empirical sp3s* tight-binding models, which include the spin-orbit coupling. The method can handle large systems while it takes account of the band mixing caused by the strain and confinement. In these perspectives, it proves itself more reliable than the traditional effective-mass approach (EMA) by further generating more relevant information about the quantum states localized within the wells; in particular, the number of bound states and their energy levels and their corresponding wavefunctions were obtained based on more realistic physical models. The quantum-confinement energy, bandgap energy, and band structures are studied versus the CdSe well width (N). The results are found to be comparable with those experimentally obtained using photoluminescence.


2009 ◽  
Vol 58 (9) ◽  
pp. 6471
Author(s):  
Song Ying-Xin ◽  
Zheng Wei-Min ◽  
Liu Jing ◽  
Chu Ning-Ning ◽  
Li Su-Mei

Laser Physics ◽  
2011 ◽  
Vol 21 (3) ◽  
pp. 582-587 ◽  
Author(s):  
A. A. Lotin ◽  
O. A. Novodvorsky ◽  
L. S. Parshina ◽  
E. V. Khaydukov ◽  
O. D. Khramova ◽  
...  

2004 ◽  
Vol 84 (5) ◽  
pp. 735-737 ◽  
Author(s):  
W. M. Zheng ◽  
M. P. Halsall ◽  
P. Harmer ◽  
P. Harrison ◽  
M. J. Steer

ACS Nano ◽  
2018 ◽  
Vol 12 (8) ◽  
pp. 7682-7689 ◽  
Author(s):  
J. Elliott Ortmann ◽  
Nishant Nookala ◽  
Qian He ◽  
Lingyuan Gao ◽  
Chungwei Lin ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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