Combination of Strong Blue Up-Conversion Photoluminescence and Greatly Enhanced Ferroelectric Polarization in Tm3+-Yb3+-W6+- Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 158 (5) ◽  
pp. G128 ◽  
Author(s):  
Feng Gao ◽  
Gangjin Ding ◽  
Hong Zhou ◽  
Guangheng Wu ◽  
Ni Qin ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization

scholarly journals Enhanced ferroelectric polarization in epitaxial (Pb1−xLax)(Zr0.52Ti0.48)O3 thin films due to low La doping

2017 ◽  
Vol 95 (17) ◽  
Author(s):  
Devajyoti Mukherjee ◽  
Mahesh Hordagoda ◽  
David Pesquera ◽  
Dipankar Ghosh ◽  
Jacob L. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
La Doping

scholarly journals Interaction between Ferroelectric Polarization and Defects in BiFeO3 Thin Films

2017 ◽  
Vol 23 (S1) ◽  
pp. 1604-1605
Author(s):  
Lin-Ze Li ◽  
Lin Xie ◽  
Yi Zhang ◽  
Xiaoxing Cheng ◽  
Zijian Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
Bifeo3 Thin Films

Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films

2021 ◽  
Author(s):  
Komalika Rani ◽  
Sylvia Matzen ◽  
Stéphane Gable ◽  
Thomas Maroutian ◽  
Guillaume Agnus ◽  
...  
Keyword(s):  
Thin Films ◽  
Photovoltaic Effect ◽  
Quantitative Relationship ◽  
Open Circuit ◽  
Ferroelectric Thin Films ◽  
Ferroelectric Polarization ◽  
Ferroelectric Layer ◽  
Ferroelectric Memories ◽  
Careful Investigation

Abstract Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

Effect of Composition on Ferroelectric Response of Bi4-xSmxTi3O12 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sandra Dussan ◽  
Maharaj Tomar ◽  
Ricardo Melgarejo ◽  
Ram Katiyar
Keyword(s):  
Thin Films ◽  
Solution Chemistry ◽  
Ferroelectric Polarization ◽  
Partial Substitution ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Trivalent Rare Earth ◽  
Ferroelectric Memory

AbstractBismuth titanate (Bi4Ti3O12) is an electroceramic within the Aurivillius phase material with week ferroelectric memory. However, the partial substitution of Bi ion by a trivalent rare earth resulted in improved ferroelectric polarization. We synthesized Bi4-xSmxTi3O12 by a solution chemistry route and thin films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. X-ray diffraction studies of the films showed a stoichiometric solid solution for the composition x ≤0.85. The films showed fatigue free ferroelectric polarization (Pr = 19.8 µC/cm2) for the composition x = 0.70. The films showed low leakage current at room temperature, showing the possibility of lead free ferroelectric devices.

scholarly journals Understanding the Effect of Doping and Epitaxial Strain on the Ferroelectric Polarization of Layered Perovskite Thin Films

2017 ◽  
Vol 23 (S1) ◽  
pp. 1606-1607
Author(s):  
Marco Campanini ◽  
Morgan Trassin ◽  
Claude Ederer ◽  
Rolf Erni ◽  
Marta D. Rossell
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
Layered Perovskite ◽  
Epitaxial Strain ◽  
Effect Of Doping

Effect of ferroelectric polarization on current response of PZT thin films

1995 ◽  
Vol 10 (1-4) ◽  
pp. 189-204 ◽  
Author(s):  
A. K. Tagantsev ◽  
A. L. Kholkin ◽  
E. L. Colla ◽  
K. G. Brooks ◽  
N. Setter
Keyword(s):  
Thin Films ◽  
Ferroelectric Polarization ◽  
Current Response ◽  
Pzt Thin Films
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