Real-Time Raman Scattering Analysis of the Electrochemical Growth of CuInSe2 Precursors for CuIn(S,Se)2 Solar Cells

2011 ◽  
Vol 158 (5) ◽  
pp. H521 ◽  
Author(s):  
V. Izquierdo-Roca ◽  
E. Saucedo ◽  
J. S. Jaime-Ferrer ◽  
X. Fontané ◽  
A. Pérez-Rodríguez ◽  
...  
Author(s):  
Jun Xi ◽  
Junseop Byeon ◽  
Unsoo Kim ◽  
Kijoon Bang ◽  
Gi Rim Han ◽  
...  

Layered Ruddlesden–Popper perovskite (RPP) photovoltaics have gained substantial attention owing to their excellent air stability. However, their photovoltaic performance is still limited by the unclear real-time charge-carrier mechanism of operating...


2014 ◽  
Vol 105 (2) ◽  
pp. 021905 ◽  
Author(s):  
C. Insignares-Cuello ◽  
C. Broussillou ◽  
V. Bermúdez ◽  
E. Saucedo ◽  
A. Pérez-Rodríguez ◽  
...  

2015 ◽  
Vol 44 (6) ◽  
pp. 630005
Author(s):  
张枝芝 ZHANG Zhi-zhi ◽  
林漫漫 LIN Man-man ◽  
张泽森 ZHANG Ze-sen ◽  
徐斌 XU Bin ◽  
姚辉璐 YAO Hui-lu ◽  
...  

2009 ◽  
Vol 17 (12) ◽  
pp. 9526 ◽  
Author(s):  
Takeo Minamikawa ◽  
Mamoru Hashimoto ◽  
Katsumasa Fujita ◽  
Satoshi Kawata ◽  
Tsutomu Araki

2016 ◽  
Vol 11 (11-12) ◽  
pp. 776-781
Author(s):  
D. V. Anokhin ◽  
K. L. Gerasimov ◽  
S. Grigoryan ◽  
D. R. Strel’tsov ◽  
A. Kiriy ◽  
...  

1996 ◽  
Vol 420 ◽  
Author(s):  
R. W. Collins ◽  
Sangbo Kim ◽  
Joohyun Koh ◽  
J. S. Burnham ◽  
Lihong Jiao ◽  
...  

AbstractWe have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally- graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vapor deposition (PECVD). As an example, we have applied the analysis to obtain the depth-profile of the optical gap and alloy composition with ≤15 Å resolution for a hydrogenated amorphous silicon-carbon alloy (a-Si1−xCx:H) film prepared by continuously varying the gas flow ratio z=[CH4]/{[CH4]+[SiH4]} in the PECVD process. The graded layer has been incorporated at the p/i interface of widegap a-Si1−xCx:H (x∼0.05) p-i-n solar cells, and consistent improvements in open-circuit voltage have been demonstrated. The importance of the graded-layer characterization is the ability to relate improvements in device performance directly to the physical properties of the interface layer, rather to the deposition parameters with which they were prepared.


Sign in / Sign up

Export Citation Format

Share Document