Epitaxial Graphene Growth on 3C–SiC(111)/AlN(0001)/Si(100)

Benjamin Hsia; Nicola Ferralis; Debbie G. Senesky; Albert P. Pisano; Carlo Carraro; Roya Maboudian

doi:10.1149/1.3518713

Epitaxial Graphene Growth on 3C–SiC(111)/AlN(0001)/Si(100)

Electrochemical and Solid-State Letters ◽

10.1149/1.3518713 ◽

2011 ◽

Vol 14 (2) ◽

pp. K13 ◽

Cited By ~ 18

Author(s):

Benjamin Hsia ◽

Nicola Ferralis ◽

Debbie G. Senesky ◽

Albert P. Pisano ◽

Carlo Carraro ◽

...

Keyword(s):

Epitaxial Graphene ◽

Graphene Growth

Download Full-text

Epitaxial graphene growth on 4H-SiC (0001) with precisely controlled step- terrace surface by high temperature annealing above 2000 °C in UHV

physica status solidi (c) ◽

10.1002/pssc.201000524 ◽

2010 ◽

Vol 8 (2) ◽

pp. 580-582 ◽

Cited By ~ 7

Author(s):

Shoji Ushio ◽

Arata Yoshii ◽

Naoto Tamai ◽

Noboru Ohtani ◽

Tadaaki Kaneko

Keyword(s):

High Temperature ◽

Epitaxial Graphene ◽

High Temperature Annealing ◽

Graphene Growth

Download Full-text

Epitaxial Graphene Growth and Shape Dynamics on Copper: Phase-Field Modeling and Experiments

Nano Letters ◽

10.1021/nl4033928 ◽

2013 ◽

Vol 13 (11) ◽

pp. 5692-5697 ◽

Cited By ~ 102

Author(s):

Esteban Meca ◽

John Lowengrub ◽

Hokwon Kim ◽

Cecilia Mattevi ◽

Vivek B. Shenoy

Keyword(s):

Phase Field ◽

Epitaxial Graphene ◽

Phase Field Modeling ◽

Graphene Growth ◽

Shape Dynamics ◽

Field Modeling ◽

Copper Phase ◽

Modeling And Experiments

Download Full-text

Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth

Journal of Applied Physics ◽

10.1063/1.4722994 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104324 ◽

Cited By ~ 3

Author(s):

Yubin Hwang ◽

Eung-Kwan Lee ◽

Heechae Choi ◽

Kyung-Han Yun ◽

Minho Lee ◽

...

Keyword(s):

Early Stage ◽

Epitaxial Graphene ◽

Graphene Growth

Download Full-text

Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)

10.7567/ssdm.2011.km-6-3 ◽

2011 ◽

Author(s):

H. Kageshima ◽

H. Hibino ◽

H. Yamaguchi ◽

M. Nagase

Keyword(s):

Epitaxial Graphene ◽

Graphene Growth ◽

Initial Stage

Download Full-text

Influence of Annealing Atmosphere on the Epitaxial Graphene Growth on 3C-SiC (111)/Si (111)

10.7567/ssdm.2011.p-8-7 ◽

2011 ◽

Author(s):

H. R. Aryal ◽

K. Fujita ◽

T. Egawa

Keyword(s):

Epitaxial Graphene ◽

Annealing Atmosphere ◽

Graphene Growth

Download Full-text

Epitaxial Graphene Growth on α-SiC: Probing the Effect of Surface Orientation

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2011.1118 ◽

2011 ◽

Vol 3 (1) ◽

pp. 49-54 ◽

Cited By ~ 9

Author(s):

N. Camara ◽

B. Jouault ◽

A. Caboni ◽

A. Tiberj ◽

P. Godignon ◽

...

Keyword(s):

Epitaxial Graphene ◽

Surface Orientation ◽

Graphene Growth ◽

Effect Of Surface

Download Full-text

Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.1150 ◽

2014 ◽

Vol 778-780 ◽

pp. 1150-1153

Author(s):

Hiroyuki Kageshima ◽

Hiroki Hibino ◽

Hiroshi Yamaguchi ◽

Masao Nagase

Keyword(s):

Surface Morphology ◽

First Principles ◽

Epitaxial Graphene ◽

First Principles Calculation ◽

Control Parameters ◽

Graphene Growth ◽

Initial Stage ◽

The Stability

The energetics for the Si desorption and the C adsorption at a [11-20] step on SiC(0001) surface are studied using the first-principles calculation. It is found that the [11-20] step is stable and nonreactive. The stability of the step is thought to govern the surface morphology during the graphene formation. It is shown that the Si pressure and the temperature are the control parameters for the surface morphology and the graphene quality.

Download Full-text