Fabrication of Fully Transparent Indium-Doped ZnO Nanowire Field-Effect Transistors on ITO/Glass Substrates

2011 ◽  
Vol 158 (2) ◽  
pp. K20 ◽  
Author(s):  
Cheng-Liang Hsu ◽  
Tsung-Ying Tsai
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Glass Substrates ◽  
Ito Glass ◽  
Doped Zno

scholarly journals Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Electrical And Optical Properties ◽  
Doped Zno

Controllability of threshold voltage in Ag-doped ZnO nanowire field effect transistors by adjusting the diameter of active channel nanowire

2010 ◽  
Vol 96 (8) ◽  
pp. 083103 ◽  
Author(s):  
Kyoungwon Kim ◽  
Pulak Chandra Debnath ◽  
Dong-Hoon Park ◽  
Sangsig Kim ◽  
Sang Yeol Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Doped Zno ◽  
Active Channel

Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors

2009 ◽  
Vol 113 (38) ◽  
pp. 16796-16801 ◽  
Author(s):  
Yang Liu ◽  
Zhiyong Zhang ◽  
Huilong Xu ◽  
Lihuan Zhang ◽  
Zhenxing Wang ◽  
...  
Keyword(s):  
Visible Light ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Response ◽  
Zno Nanowire ◽  
Visible Light Response ◽  
Doped Zno

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

A fabrication technique for top-gate ZnO nanowire field-effect transistors by a photolithography process

2007 ◽  
Vol 84 (5-8) ◽  
pp. 1622-1626 ◽  
Author(s):  
Kihyun Keem ◽  
Jeongmin Kang ◽  
Changjoon Yoon ◽  
Donghyuk Yeom ◽  
Dong-Young Jeong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication Technique ◽  
Zno Nanowire ◽  
Photolithography Process

Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

2007 ◽  
Vol 544-545 ◽  
pp. 753-756
Author(s):  
In Jae Back ◽  
Su Cheol Gong ◽  
Hun Seoung Lim ◽  
Ik Sub Shin ◽  
Seoung Woo Kuk ◽  
...  
Keyword(s):  
Active Layer ◽  
Glass Substrate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Semiconductor Films ◽  
Insulation Property ◽  
Ito Glass ◽  
Lower Mobility

The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors

Nano Letters ◽  
2006 ◽  
Vol 6 (7) ◽  
pp. 1454-1458 ◽  
Author(s):  
Kihyun Keem ◽  
Dong-Young Jeong ◽  
Sangsig Kim ◽  
Moon-Sook Lee ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Device Characterization

Tuning of the Electronic Characteristics of ZnO Nanowire Field Effect Transistors by Proton Irradiation

ACS Nano ◽  
2010 ◽  
Vol 4 (2) ◽  
pp. 811-818 ◽  
Author(s):  
Woong-Ki Hong ◽  
Gunho Jo ◽  
Jung Inn Sohn ◽  
Woojin Park ◽  
Minhyeok Choe ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Field Effect Transistors ◽  
Zno Nanowire

Proton Irradiation-Induced Electrostatic Modulation in ZnO Nanowire Field-Effect Transistors With Bilayer Gate Dielectric

2012 ◽  
Vol 11 (5) ◽  
pp. 918-923 ◽  
Author(s):  
Gunho Jo ◽  
Woong-Ki Hong ◽  
Minhyeok Choe ◽  
Woojin Park ◽  
Yung Ho Kahng ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Irradiation ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Zno Nanowire
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