Direct Indium Tin Oxide Nanoparticle Printing Technique for Improvement of Light Extraction Efficiency of GaN-Based LEDs

2010 ◽  
Vol 157 (11) ◽  
pp. H1067 ◽  
Author(s):  
Ki-Yeon Yang ◽  
Sang-Chul Oh ◽  
Joong-Yeon Cho ◽  
Kyeong-Jae Byeon ◽  
Heon Lee
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Printing Technique ◽  
Oxide Nanoparticle

scholarly journals GEOMETRICAL ANALYSIS OF LIGHT-EMITTING DIODE FOR ENHANCING EXTRACTION EFFICIENCY

2020 ◽  
Vol 15 (6) ◽  
pp. 68-84
Author(s):  
ADAM SHAARI ◽  
◽  
AHMAD FAKHRURRAZI AHMAD NOORDEN ◽  
SAIFUL NAJMEE MOHAMAD ◽  
SUZAIRI DAUD ◽  
...  
Keyword(s):  
Contact Area ◽  
Indium Tin Oxide ◽  
Extraction Efficiency ◽  
Light Emitting Diode ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Current Spreading ◽  
Light Emitting ◽  
Uniform Current ◽  
Electrode Contact

A non-uniform current spreading in the current spreader can greatly reduce the efficiency of the light-emitting diode (LED). The effects of the electrode contact area to the spreading layer towards extraction efficiency of LED chips is analysed in analytical simulations. Length of current spreading and light extraction efficiency is analysed for variation of contact area. The contact area value is varied by changing the shape of the electrode and the value of width of contact area. The increase in contact area decreases light extraction efficiency as more light are absorbed by the bottom electrode surface. The effective current spreading length for Indium Tin Oxide (ITO) of thickness 300nm is 36.44µm. The 6 strips ‘fork’ design is the most optimum. The design has the most area for photons produced in active region to escape without reducing the area cover with current density. This enables the chip to has more extraction efficiency with more uniform current spreading.

scholarly journals SILAR-Based Application of Various Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
S. C. Shei
Keyword(s):  
Output Power ◽  
Indium Tin Oxide ◽  
Extraction Efficiency ◽  
Light Output ◽  
Contact Layer ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Operating Voltage ◽  
Light Output Power ◽  
The Difference

We reported the various nanopillars on GaN-based LED to enhance light-extraction efficiency prepared by successive ionic layer adsorption and reaction method (SILAR). Indium tin oxide (ITO) with thickness of 1 μm as transparent contact layer was grown to improve the electrical characteristics of the LEDs, including series resistance and operating voltage. SILAR-deposition ZnO nanoparticles on SiO2were used as etching nanomasks. Multiple nanopillars were simultaneously formed on overall surfaces of ITO p- and n-GaN by ICP etching. The proposed GaN-based LEDs with nanopillars increase light output power by 7%–20.3% (at 20 mA) over that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in materials and shapes of nanopillars, resulting in a reduction in Fresnel reflection by the roughened surface of GaN-based LEDs.

ZnO Nano-arrays on High Power Blue LED Chip for Enhanced Light Extraction Efficiency

2012 ◽  
Vol 27 (7) ◽  
pp. 716-720
Author(s):  
Bing XU ◽  
Jun-Liang ZHAO ◽  
Jian-Ming ZHANG ◽  
Xiao-Wei SUN ◽  
Fu-Wei ZHUGE ◽  
...  
Keyword(s):  
High Power ◽  
Extraction Efficiency ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Blue Led
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