(Invited) Practical Strategies for Tuning Optical, Structural and Thermal Properties in Group IV Ternary Semiconductors

2019 ◽  
Vol 33 (6) ◽  
pp. 717-728
Author(s):  
A. V. Chizmeshya ◽  
John Kouvetakis
Keyword(s):  
Thermal Properties ◽  
Group Iv ◽  
Ternary Semiconductors

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

The thermal properties of some amine tetraphenylboron salts8-Quinolinol and its derivatives

1960 ◽  
Vol 23 ◽  
pp. 332-336 ◽  
Author(s):  
W WENDLANDT ◽  
J VANTASSEL ◽  
G ROBERTHORTON
Keyword(s):  
Thermal Properties

Thermal properties of an erbium-doped fibre amplifier

1990 ◽  
Vol 137 (3) ◽  
pp. 155 ◽  
Author(s):  
C.A. Millar ◽  
T.J. Whitley ◽  
S.C. Fleming
Keyword(s):  
Thermal Properties ◽  
Fibre Amplifier ◽  
Erbium Doped

Thermal properties of Sr0,3Ba0,7Ti1-yZryO3ferroelectric ceramics: Dependence on sample’s porosity

2005 ◽  
Vol 125 ◽  
pp. 309-311 ◽  
Author(s):  
S. García ◽  
E. Marín ◽  
O. Delgado-Vasallo ◽  
J. Portelles ◽  
G. Peña Rodríguez ◽  
...  
Keyword(s):  
Thermal Properties

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors
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