Strain Stability in Nanoscale Patterned Strained Silicon-On-Insulator

2019 ◽  
Vol 33 (6) ◽  
pp. 511-522 ◽  
Author(s):  
Oussama Moutanabbir ◽  
Manfred Reiche ◽  
Angelika Hähnel ◽  
W. Erfurth ◽  
A. Tarun ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
Strain Stability

Submicron mapping of strained silicon-on-insulator features induced

2007 ◽  
Vol 90 (17) ◽  
pp. 171919 ◽  
Author(s):  
Conal E. Murray ◽  
M. Sankarapandian ◽  
S. M. Polvino ◽  
I. C. Noyan ◽  
B. Lai ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon

Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography

2019 ◽  
Vol 16 (10) ◽  
pp. 539-543 ◽  
Author(s):  
Takayoshi Shimura ◽  
Tomoyuki Inoue ◽  
Yuki Okamoto ◽  
Takuji Hosoi ◽  
Hiroki Edo ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
X Ray

New Strained Silicon-on-Insulator Fabricated by Laser-Annealing Technology

2005 ◽  
Vol 44 (4B) ◽  
pp. 2336-2339 ◽  
Author(s):  
Yasuyoshi Mishima ◽  
Hirohisa Ochimizu ◽  
Atsushi Mimura
Keyword(s):  
Laser Annealing ◽  
Silicon On Insulator ◽  
Strained Silicon

Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator

2010 ◽  
Vol 97 (5) ◽  
pp. 053105 ◽  
Author(s):  
O. Moutanabbir ◽  
M. Reiche ◽  
A. Hähnel ◽  
M. Oehme ◽  
E. Kasper
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
Raman Analysis

S63 X-ray Studies of Strained Silicon on Insulator

2008 ◽  
Vol 23 (2) ◽  
pp. 188-188
Author(s):  
M. Bibee ◽  
A. Mehta ◽  
S. Brennan ◽  
P. Pianetta
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
X Ray

Nanoscale Heat Conduction in the SOI, Strained-Si and Tri-Gate Transistors

2004 ◽  
Author(s):  
Mehdi Asheghi
Keyword(s):  
Carrier Mobility ◽  
High Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Device Performance ◽  
Strained Si ◽  
Insulator Layer ◽  
Junction Capacitance ◽  
Induced Changes ◽  
Soi Technology

There have been many attempts in the recent years to improve the device performance by enhancing carrier mobility by using the strained-induced changes in silicon electronic bands [1–4] or reducing the junction capacitance in silicon-on-insulator (SOI) technology. Strained silicon on insulator (SSOI) is another promising technology, which is expected to show even higher performance, in terms of speed and power consumption, comparing to the regular strained-Si transistors. In this technology, the strained silicon is incorporated in the silicon on insulator (SOI) technology such that the strained-Si introduces high mobility for electrons and holes and the insulator layer (usually SiO2) exhibits low junction capacitance due to its small dielectric constant [5, 6]. In these devices a layer of SiGe may exist between the strined-Si layer and insulator (strained Si-on-SiGe-on-insulator, SGOI) [6] or the strained-Si layer can be directly on top of the insulator [7]. Latter is advantageous for eliminating some of the key problems associated with the fabrication of SGOI.

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

2004 ◽  
Vol 809 ◽  
Author(s):  
B. Ghyselen ◽  
Y. Bogumilowicz ◽  
C. Aulnette ◽  
A. Abbadie ◽  
B. Osternaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Hole Mobility ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Layer Transfer ◽  
Strained Si ◽  
Engineered Substrates

ABSTRACTStrained Silicon On Insulator wafers are today envisioned as a natural and powerfulenhancement to standard SOI and/or bulk-like strained Si layers. For MOSFETs applications, thisnew technology potentially combines enhanced devices scalability allowed by thin films andenhanced electron and hole mobility in strained silicon. This paper is intended to demonstrate byexperimental results how a layer transfer technique such as the Smart Cut™ technology can be usedto obtain good quality tensile Strained Silicon On insulator wafers. Detailed experiments andcharacterizations will be used to characterize these engineered substrates and show that they arecompatible with the applications.

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