LiNbO3 Single Crystal Layer Transfer Techniques for High Performances RF Filters

2019 ◽  
Vol 33 (4) ◽  
pp. 225-232
Author(s):  
Chrystel Deguet ◽  
Mathieu Pijolat ◽  
Nicolas Blanc ◽  
Bruno Imbert ◽  
Sebastien Loubriat ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystal Layer ◽  
Layer Transfer ◽  
Rf Filters ◽  
Single Crystal Layer

Study on Epitaxial Growth of CeO2 (110)/Si(100) in Conjunction with Substrate Off-Orientation

1994 ◽  
Vol 341 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh ◽  
Tetsu Ohsuna ◽  
Hiroaki Myoren ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Thick Layer ◽  
Crystalline Quality ◽  
Orientation Effect ◽  
Layer Surface ◽  
Crystal Layer ◽  
Layer Formation ◽  
20 Nm ◽  
Single Crystal Layer

AbstractThe substrate off-orientation effect is systematically studied on epitaxial CeO2(110) layers on Si(100), and the crystalline quality is significantly improved by enhancement of domains whose 〈110〉 is perpendicular to the offset-direction (Si〈110〉). AFM measurements indicate that the CeO2 layer surface consists of stripe-shaped facets and that their size is typically 100˜200 nm long, 20 nm wide and ∼3 nm high for a 150 nm-thick layer. RHEED and XTEM reveal that CeO2〈110〉 axis is inclined from wafer normal by the off-angle. The step arrangement at Si surface observed by XTEM relates closely to the inclination of the facets. It is found that off-orientation (≥∼,2.5°) leads to single crystal layer formation. RBS analyses verify that the crystalline quality is significantly improved, especially at the surface. The best result is obtained at the off-angle of 2.5°.

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