Optical and Electrical Properties of Ga-Doped ZnO Single Crystalline Films Grown on MgAl[sub 2]O[sub 4](111) by Low Temperature Hydrothermal Synthesis

2010 ◽  
Vol 157 (8) ◽  
pp. H796 ◽  
Author(s):  
Hong Quang Le ◽  
Swee Kuan Lim ◽  
Gregory Kia Liang Goh ◽  
Soo Jin Chua ◽  
JunXiong Ong
Keyword(s):  
Hydrothermal Synthesis ◽  
Electrical Properties ◽  
Low Temperature ◽  
Optical And Electrical Properties ◽  
Single Crystalline ◽  
Crystalline Films ◽  
Doped Zno

Effect of O2partial pressure on optical and electrical properties in Al doped ZnO thin films

2014 ◽  
Vol 29 (5) ◽  
pp. 275-280 ◽  
Author(s):  
P. J. Cao ◽  
W. J. Liu ◽  
F. Jia ◽  
Y. X. Zeng ◽  
D. L. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

Hydrothermal synthesis of single-crystalline La0.5Ca0.5MnO3 nanowires at low temperature

2004 ◽  
Vol 14 (18) ◽  
pp. 2787 ◽  
Author(s):  
T. Zhang ◽  
C. G. Jin ◽  
T. Qian ◽  
X. L. Lu ◽  
J. M. Bai ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Single Crystalline

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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