ZnO Nanorod/p-GaN Heterostructured Light-Emitting Diodes Passivated Using Photoelectrochemical Method

2019 ◽  
Vol 28 (4) ◽  
pp. 71-77
Author(s):  
Jheng-Tai Yan ◽  
Ching-Ting Lee
2010 ◽  
Vol 97 (1) ◽  
pp. 013101 ◽  
Author(s):  
Bo Ling ◽  
Jun Liang Zhao ◽  
Xiao Wei Sun ◽  
Swee Tiam Tan ◽  
Aung Ko Ko Kyaw ◽  
...  

2014 ◽  
Vol 50 (12) ◽  
pp. 1417-1419 ◽  
Author(s):  
Yan Zhang ◽  
Lei Ge ◽  
Meng Li ◽  
Mei Yan ◽  
Shenguang Ge ◽  
...  

2011 ◽  
Vol 14 (3) ◽  
pp. H120 ◽  
Author(s):  
Jang-Won Kang ◽  
Min-Suk Oh ◽  
Yong-Seok Choi ◽  
Chu-Young Cho ◽  
Tae-Young Park ◽  
...  

2017 ◽  
Vol 189 ◽  
pp. 144-147 ◽  
Author(s):  
Cheng Chen ◽  
Jun Zhang ◽  
Jingwen Chen ◽  
Shuai Wang ◽  
Renli Liang ◽  
...  

2011 ◽  
Vol 110 (9) ◽  
pp. 094513 ◽  
Author(s):  
Xinyi Chen ◽  
Alan Man Ching Ng ◽  
Fang Fang ◽  
Yip Hang Ng ◽  
Aleksandra B Djurišić ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Yu-Ting Su ◽  
Chia-Hsin Chao ◽  
Véronique Bardinal

The GaN-based flip-chip white light-emitting diodes (FCWLEDs) with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.


Sign in / Sign up

Export Citation Format

Share Document