Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes Using Graded-Refractive-Index Layer by SiO[sub 2] Nanosphere Lithography
2010 ◽
Vol 157
(4)
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pp. H449
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2011 ◽
Vol 50
(10R)
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pp. 102101
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2014 ◽
Vol 97
(9)
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pp. 2789-2793
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2011 ◽
Vol 50
(10)
◽
pp. 102101
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2014 ◽
Vol 15
(10)
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pp. 2178-2183
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2009 ◽
Vol 48
(8)
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pp. 08HK03
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2008 ◽
Vol 5
(6)
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pp. 2083-2085
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