Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers

2010 ◽  
Vol 13 (4) ◽  
pp. H134 ◽  
Author(s):  
Yong-Mu Kim ◽  
Young-Su Park ◽  
Andrew O’Reilly ◽  
Jang-Sik Lee
Keyword(s):  
Polymer Composite ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Devices ◽  
Metallic Nanoparticle ◽  
Organic Field Effect Transistor ◽  
Composite Layers ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor

Pentafluorosulfanylated polymers as electrets in nonvolatile organic field-effect transistor memory devices

2019 ◽  
Vol 7 (26) ◽  
pp. 7865-7871 ◽  
Author(s):  
Guoxian Zhang ◽  
Yu-Jung Lee ◽  
Prabhat Gautam ◽  
Chia-Chi Lin ◽  
Cheng-Liang Liu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Storage ◽  
Memory Devices ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
Styrenic Polymer ◽  
Polymer Electrets

Styrenic polymer electrets with pentafluorosulfanylated sidechains demonstrate their charge-storage capabilities in organic nonvolatile memory devices.

Nonvolatile Organic Field-Effect Transistor Memory from Pyrene-fused Azaindacene Regioisomers

2021 ◽  
Author(s):  
Duan-Wu Liu ◽  
Yamin Zhang ◽  
Xiangyang Li ◽  
Qi Xiao ◽  
Wenjing Sun ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Materials ◽  
Memory Devices ◽  
Organic Field Effect Transistor ◽  
Nonvolatile Memory Devices ◽  
Effect Transistor ◽  
New Generation

Nonvolatile memory devices based on organic materials are promising for new generation of portable or flexible electronics. Herein, we designed and synthesized two pyrene-fused azaindacene configurational isomers, syn-B2IPIO and anti-B2IPIO,...

One-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons for nonvolatile memory devices with high resistance switching

2017 ◽  
Vol 5 (25) ◽  
pp. 6156-6162 ◽  
Author(s):  
Ni Zheng ◽  
Zhibin Shao ◽  
Feifei Xia ◽  
Tianhao Jiang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
High Resistance ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Core Shell ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
One Step ◽  
Effect Transistor

A one-step fabrication of CdS:Mo–CdMoO4core–shell nanoribbons (NR) was achieved for applications in high performance nano-field-effect transistor (FET)-based nonvolatile memory (NVM) device.

A nonvolatile memory element based on an organic field-effect transistor

2004 ◽  
Vol 85 (10) ◽  
pp. 1823-1825 ◽  
Author(s):  
K. N. Narayanan Unni ◽  
Remi de Bettignies ◽  
Sylvie Dabos-Seignon ◽  
Jean-Michel Nunzi
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Element ◽  
Organic Field Effect Transistor ◽  
Effect Transistor
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