Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application

2010 ◽  
Vol 13 (3) ◽  
pp. H80 ◽  
Author(s):  
Musarrat Hasan ◽  
Sun Jin Yun ◽  
Jae Bon Koo ◽  
Sang Hee Ko Park ◽  
Yong Hae Kim ◽  
...  
Nanoscale ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 5175-5185 ◽  
Author(s):  
Xin Gao ◽  
Mupeng Zheng ◽  
Xiaodong Yan ◽  
Jing Fu ◽  
Yudong Hou ◽  
...  

An ultrahigh g33 of 600 × 10−3 V m N−1 is achieved by a composite of BCZT particles aligned in a PDMS matrix by dielectrophoresis.


Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...


Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 190
Author(s):  
Ali Hassan ◽  
Muhammad Azam ◽  
Yeong Hwan Ahn ◽  
Muhammad Zubair ◽  
Yu Cao ◽  
...  

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.


2018 ◽  
Vol 345 ◽  
pp. 186-195 ◽  
Author(s):  
Xu Liang ◽  
Guohui Long ◽  
Chengwei Fu ◽  
Mingjun Pang ◽  
Yunlong Xi ◽  
...  

2015 ◽  
Vol 6 (42) ◽  
pp. 7464-7469 ◽  
Author(s):  
Hung-Ju Yen ◽  
Chih-Jung Chen ◽  
Jia-Hao Wu ◽  
Guey-Sheng Liou

Three series of memory devices were prepared from OHTPA-based high-performance polymers and the memory behaviors can be tuned in a wide range by varying the concentration of electron-acceptor PCBM.


2020 ◽  
Vol 8 (14) ◽  
pp. 6510-6516 ◽  
Author(s):  
Yuyuan Ma ◽  
Beibei Tang ◽  
Weitao Lian ◽  
Chunyan Wu ◽  
Xiaomin Wang ◽  
...  

Introducing tellurium fine tunes the atomic ratio of Se/Sb in Sb2Se3, turning it between Se-rich and Se-poor states effecting the corresponding deep defects.


1962 ◽  
Vol BTR-8 (2) ◽  
pp. 96-107
Author(s):  
John A. MacIntosh ◽  
Samuel A. Schwartz ◽  
Richard Q. Lane ◽  
Paul J. Beneteau

2015 ◽  
Vol 589 ◽  
pp. 90-94 ◽  
Author(s):  
Musarrat Hasan ◽  
Manh-Cuong Nguyen ◽  
Hyojin Kim ◽  
Seung-Won You ◽  
Yoon-Seok Jeon ◽  
...  

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