Publisher's Note: Electrically Benign Dry-Etching Method for Rutile TiO[sub 2] Thin-Film Capacitors with Ru Electrodes [Electrochem. Solid-State Lett., 13, G1 (2010)]

2010 ◽  
Vol 13 (3) ◽  
pp. S1
Author(s):  
Kyung Min Kim ◽  
Sang Young Lee ◽  
Gyu Jin Choi ◽  
Jeong Hwan Han ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Dry Etching ◽  
Etching Method ◽  
Thin Film Capacitors

Electrically Benign Dry-Etching Method for Rutile TiO[sub 2] Thin-Film Capacitors with Ru Electrodes

2010 ◽  
Vol 13 (1) ◽  
pp. G1 ◽  
Author(s):  
Kyung Min Kim ◽  
Sang Young Lee ◽  
Gyu Jin Choi ◽  
Jeong Hwan Han ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Dry Etching ◽  
Etching Method ◽  
Thin Film Capacitors

Dry Etching Issues in the Integration of Ferroelectric Thin Film Capacitors

1996 ◽  
Vol 433 ◽  
Author(s):  
G. E. Menk ◽  
S. B. Desu ◽  
W. Pan ◽  
D. P. Vijay
Keyword(s):  
Thin Film ◽  
Etch Rate ◽  
Large Scale ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Underlying Mechanism ◽  
Dry Etching ◽  
Fatigue Properties ◽  
Thin Film Capacitors ◽  
Etch Rates

AbstractDry etching is an area that demands a great deal of attention in the large scale integration of ferroelectric thin film capacitors for nonvolatile random access memory applications. In this review, we discuss some of the issues relating to the etching of the ferroelectric films, patterning of the electrodes, device damage caused by the etch process and post-etch residue problems. An etch process that can provide high etch rates and good etch anisotropy for the current candidate ferroelectrics including Pb(Zr, Ti)O3 and layered structure SrBi2Ta2O9 thin films using environmentally benign gases such as hydrochlorofluorocarbons is presented. The etch mechanism for both of these materials was determined to rely substantially on ion bombardment effects. For example, PZT films were etched anisotropically at rates of up to 60 nm/min using CHCIFCF3 gas under high rf power and low gas pressure conditions. Problems remain with respect to the acrosswafer differential etch rates observed when more than one phase is present in the material (e.g., amorphous/pyrochlore + perovskite phases in PZT). Damage caused by the etch process which can lead to changes in device characteristics, including hysteresis and fatigue properties, and the underlying mechanism that causes the damage are discussed. O2 was found to be a suitable etch gas for etching the conductive oxide electrode material RuO2. However, an anomaly in the etch rate was detected upon introduction of a small amount of fluorine containing gas: addition of 2% of CF3CFH2 gas to the O2 plasma increases the etch rate by a factor of four. This can be taken advantage of in obtaining high etch selectivity between the electrode and ferroelectric layers.

scholarly journals Solid State NMR Spectroscopy a Valuable Technique for Structural Insights of Advanced Thin Film Materials: A Review

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1494
Author(s):  
Mustapha El Hariri El Nokab ◽  
Khaled O. Sebakhy
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Solid State Nmr ◽  
Pulse Sequences ◽  
3D Structure ◽  
Spectroscopic Techniques ◽  
Film Research ◽  
Versatile Technique ◽  
Work Done

Solid-state NMR has proven to be a versatile technique for studying the chemical structure, 3D structure and dynamics of all sorts of chemical compounds. In nanotechnology and particularly in thin films, the study of chemical modification, molecular packing, end chain motion, distance determination and solvent-matrix interactions is essential for controlling the final product properties and applications. Despite its atomic-level research capabilities and recent technical advancements, solid-state NMR is still lacking behind other spectroscopic techniques in the field of thin films due to the underestimation of NMR capabilities, availability, great variety of nuclei and pulse sequences, lack of sensitivity for quadrupole nuclei and time-consuming experiments. This article will comprehensively and critically review the work done by solid-state NMR on different types of thin films and the most advanced NMR strategies, which are beyond conventional, and the hardware design used to overcome the technical issues in thin-film research.

Photonic methods for rapid crystallization of LiMn2O4 cathodes for solid-state thin-film batteries

2021 ◽  
Vol 495 ◽  
pp. 229424
Author(s):  
Xubin Chen ◽  
Jordi Sastre ◽  
Matthias Rumpel ◽  
Andreas Flegler ◽  
Anurag Singhania ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Rapid Crystallization ◽  
Thin Film Batteries ◽  
Limn2o4 Cathodes

Ensemble Design of Electrode–Electrolyte Interfaces: Toward High-Performance Thin-Film All-Solid-State Li–Metal Batteries

ACS Nano ◽  
2021 ◽  
Vol 15 (3) ◽  
pp. 4561-4575
Author(s):  
Cheng-Fan Xiao ◽  
Jong Heon Kim ◽  
Su-Ho Cho ◽  
Yun Chang Park ◽  
Min Jung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
High Performance

Solid-state reaction process for high-quality organometallic halide perovskite thin film

2021 ◽  
Vol 227 ◽  
pp. 111014
Author(s):  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Kun-Mu Lee ◽  
Chuan-Jung Lin ◽  
Hao-Chien Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Reaction Process ◽  
High Quality ◽  
Halide Perovskite

A Self‐Limited Free‐Standing Sulfide Electrolyte Thin Film for All‐Solid‐State Lithium Metal Batteries

2021 ◽  
pp. 2101985
Author(s):  
Gao‐Long Zhu ◽  
Chen‐Zi Zhao ◽  
Hong‐Jie Peng ◽  
Hong Yuan ◽  
Jiang‐Kui Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Lithium Metal ◽  
Free Standing ◽  
Lithium Metal Batteries
Sign in / Sign up

Export Citation Format

Share Document