A Low Operating Voltage ZnO Thin Film Transistor Using a High-κ HfLaO Gate Dielectric

2010 ◽  
Vol 13 (1) ◽  
pp. H8 ◽  
Author(s):  
N. C. Su ◽  
S. J. Wang ◽  
Albert Chin
2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.


2015 ◽  
Vol 107 (10) ◽  
pp. 103302 ◽  
Author(s):  
Amit Tewari ◽  
Srinivas Gandla ◽  
Anil Reddy Pininti ◽  
K. Karuppasamy ◽  
Siva Böhm ◽  
...  

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh

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