Effect of Cu–Li Co-Doping on the Structural, Optical, and Optoelectronic Properties of Sol-Gel ZnO Thin Films

2009 ◽  
Vol 156 (12) ◽  
pp. H916 ◽  
Author(s):  
T. Ghosh ◽  
D. Basak
2014 ◽  
Vol 318 ◽  
pp. 309-313 ◽  
Author(s):  
Ebru Gungor ◽  
Tayyar Gungor ◽  
Deniz Caliskan ◽  
Abdullah Ceylan ◽  
Ekmel Ozbay

2014 ◽  
Vol 28 (1) ◽  
pp. 117-123 ◽  
Author(s):  
Shimul Kanti Nath ◽  
Nishita Chowdhury ◽  
Md. Abdul Gafur

2015 ◽  
Vol 26 (7) ◽  
pp. 5451-5458
Author(s):  
K. Ravichandran ◽  
M. Vasanthi ◽  
K. Thirumurugan ◽  
K. Karthika ◽  
B. Sakthivel

RSC Advances ◽  
2015 ◽  
Vol 5 (106) ◽  
pp. 87007-87018 ◽  
Author(s):  
Ahmad Hossein Adl ◽  
Piyush Kar ◽  
Samira Farsinezhad ◽  
Himani Sharma ◽  
Karthik Shankar

The type of sol-stabilizer profoundly influences the crystallographic orientation and optoelectronic properties of sol gel ZnO thin films.


2020 ◽  
Vol 183 ◽  
pp. 05002 ◽  
Author(s):  
Hamza Belkhanchi ◽  
Younes Ziat ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
Abdelaziz Moutcine ◽  
...  

In this study, we have investigated the surface analysis and optoelectronic properties on the synthesis of N-CNT/TiO2 composites thin films, using sol gel method for a dye synthetized solar cell (DSSC) which is found to be simple and economical route. The titanium dioxide based solar cells are an exciting photovoltaic candidate; they are promising for the realization of large area devices. That can be synthetized by room temperature solution processing, with high photoactive performance. In the present work, we stated comparable efficiencies by directing our investigation on obtaining Sol Gel thin films based on N-CNT/TiO2, by dispersing nitrogen (N) doped carbon nanotubes (N-CNTs) powders in titanium tetraisopropoxyde (TTIP). The samples were assessed in terms of optical properties, using UV—visible absorption spectroscopic techniques. After careful analysis of the results, we have concluded that the mentioned route is good and more efficient in terms of optoelectronic properties. The gap of “the neat” 0.00w% N-CNT/TiO2 is of 3eV, which is in a good agreement with similar gap of semiconductors. The incorporated “w%NCNTs” led to diminishing the Eg with increasing N-CNTs amount. These consequences are very encouraging for optoelectronic field.


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