Fabrication of Micro- and Nano-electrodes by Selective Chemical Vapor Deposition of Cu on Si Substrates Patterned with AZ5214{trade mark, serif} and PMMA

2019 ◽  
Vol 25 (8) ◽  
pp. 1285-1292 ◽  
Author(s):  
Giorgos Papadimitropoulos ◽  
Sara Cibella ◽  
Roberto Leoni ◽  
Aggeliki Arapoyianni ◽  
Dimitris Davazoglou
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Trade Mark ◽  
Si Substrates ◽  
Selective Chemical

Effects on Selective CVD of Titanium Disilicide by Substrate Doping and Selective Silicon Deposition

1999 ◽  
Vol 564 ◽  
Author(s):  
Jer-shen Maa ◽  
David J. Howard
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Process Stability ◽  
Film Properties ◽  
Titanium Disilicide ◽  
Si Substrates ◽  
Selective Chemical ◽  
Substrate Doping

AbstractDuring selective chemical vapor deposition (CVD) of titanium disilicide on silicon, consumption of As implanted silicon substrates is enhanced relative to Si substrates implanted with other species. In this study, a selective epitaxially grown Si (SEG Si) layer has been deposited prior to selective CVD of titanium disilicide on samples with different implanted doses of either As or B. If no SEG Si film is deposited, the selective CVD TiSi2 film properties strongly depended on dopant type (As vs. B) and on dopant dose. Addition of a SEG Si film prior to selective CVD TiSi2 improves process stability as a function of changes in initial ion implanted conditions. Use of a SEG Si film prior to selective CVD TiSi2 results in values of TiSi2 thickness and TiSi2 sheet resistance which are approximately constant as a function of initial ion implant dose, and are approximately equal for both the As and B implanted samples used in this study.

Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

2012 ◽  
Vol 523 ◽  
pp. 25-28 ◽  
Author(s):  
Meng Yang ◽  
Shuichi Ogawa ◽  
Susumu Takabayashi ◽  
Taiichi Otsuji ◽  
Yuji Takakuwa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Si Substrates

scholarly journals In-plane growth of large ultra-thin SnS2 nanosheets by tellurium-assisted chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (46) ◽  
pp. 29080-29087 ◽  
Author(s):  
Zhigang Wang ◽  
Fei Pang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates

We successfully synthesized in-plane SnS2 NSs with sizes up to 280 μm on SiO2/Si substrates via Te-assisted CVD.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

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