Chemical Vapor Deposition of Silica Nanowires using Heteroleptic Bis(ethylmethylamino)silane Precursor

2019 ◽  
Vol 25 (8) ◽  
pp. 1159-1165
Author(s):  
Hyeong Joon Kim ◽  
Sanghyun Park ◽  
Jaeyeong Heo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silica Nanowires ◽  
Silane Precursor

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

1996 ◽  
Vol 11 (6) ◽  
pp. 1483-1488 ◽  
Author(s):  
R. A. Levy ◽  
X. Lin ◽  
J. M. Grow ◽  
H. J. Boeglin ◽  
R. Shalvoy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Environmentally Benign ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Silane Precursor

This study investigates the use of the environmentally benign precursor tri(dimethylamino)silane (TDMAS) with NH3 to synthesize silicon nitride films by low pressure chemical vapor deposition. The growth kinetics are investigated as a function of deposition temperature, total pressure, and NH3/TDMAS flow ratios. The deposits are found to be essentially stoichiometric and to contain ∼5 at. % carbon when appropriate NH3 concentrations are present. The films are found in all cases to be amorphous and highly tensile. For optimized processing conditions, values of the refractive index are close to those reported for Si3N4. The film density is observed to increase with higher deposition temperatures up to 800 °C and then decrease due to the onset of gas phase nucleation effects. This behavior is readily reflected in the etch rate of those films. FTIR spectra reveal the presence of hydrogen even at high deposition temperatures (900 °C). Hardness and Young's modulus of the films are seen to increase with higher deposition temperatures, reaching saturation values near 20 and 185 GPa, respectively, above 800 °C.

Characterization of Flexible Low-k Dielectric SiCOH Films Prepared by Plasma-Enhanced Chemical Vapor Deposition of Tetrakis(trimethylsilyloxy)Silane Precursor

2021 ◽  
Vol 21 (4) ◽  
pp. 2139-2147
Author(s):  
Yeji Lee ◽  
Wonjin Ban ◽  
Seonhee Jang ◽  
Donggen Jung
Keyword(s):  
Chemical Vapor Deposition ◽  
Chemical Bonding ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Chemical Compositions ◽  
Plasma Power ◽  
Bending Tests ◽  
Silane Precursor ◽  
Deposited Films

SiCOH thin films were deposited on rigid silicon (Si) wafers and flexible ITO/PEN substrates via plasma-enhanced chemical vapor deposition at room temperature using a tetrakis(trimethylsilyloxy)silane (TTMSS) precursor. Different chemical compositions of hydrocarbon and Si–O bondings were obtained depending on substrate types and deposition conditions. The main chemical compositions of the as-deposited films were observed as C–Hx (x = 2, 3) stretching, Si–CH3 bending, Si–O–Si stretching, and H–Si–O bending/Si–CH3 stretching modes. With regard to the as-deposited films, the dielectric constant increased from 1.83 to 3.45 when the plasma power increased from 20 to 80 W and the lowest leakage current of 1.76×10-4 A/cm2 was obtained at the plasma power of 80 W. After bending tests with 1000, 5000, and 10000 bending cycles, the dielectric constants of the SiCOH films increased and leakage currents decreased. The structures of the SiCOH films after the bending tests were highly complicated with a variety of chemical bonding combinations. Higher peak intensity and peak area of main chemical bonding were obtained with the increased bending cycles, resulting in the increase in dielectric constants. It should be noted that the film with small changes in peak area fractions of the bending and stretching modes showed good electrical and mechanical stabilities after bending tests.

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