Capacitance-Voltage Analysis of ZrO2 Thin Films Deposited by Thermal MOCVD Technique

2019 ◽  
Vol 25 (8) ◽  
pp. 901-907 ◽  
Author(s):  
Thomas A. Mih ◽  
Shashi Paul ◽  
Andrian P. Milanov ◽  
Raghunandan Bhakta ◽  
Anjana Devi
Keyword(s):  
Thin Films ◽  
Capacitance Voltage ◽  
Mocvd Technique

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

2014 ◽  
Vol 1633 ◽  
pp. 55-60 ◽  
Author(s):  
Kazushi Hayashi ◽  
Aya Hino ◽  
Hiroaki Tao ◽  
Yasuyuki Takanashi ◽  
Shinya Morita ◽  
...  
Keyword(s):  
Thin Films ◽  
Peak Position ◽  
Process Conditions ◽  
Charge Densities ◽  
Capacitance Voltage ◽  
Time Regime ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Gap States ◽  
Capacitance Transient

ABSTRACTIn the present study, the sub-gap states of amorphous In-Ga-Zn-O (a-IGZO) thin films treated with various process conditions have been evaluated by means of capacitance-voltage (C-V) characteristics and isothermal capacitance transient spectroscopy (ICTS). It was found that the space-charge densities of the a-IGZO decreased as the oxygen partial pressure was increased during the sputtering of a-IGZO thin films. The ICTS spectra for the 4, 8, and 12 % samples were similar and the peak positions were found to be around 1 × 10-2 s at 180 K. On the other hand, the peak position for the 20 % sample shifted to a longer time regime and was located at around 2 × 10-1 s at 180 K. The total densities of the traps for the 4, 8, and 12 % samples were calculated to be 5−6 × 1016 cm-3, while that for 20 % was one order of magnitude lower than the others. From Thermal desorption spectrometer, it was found that desorption of Zn atoms started at a temperature higher than 300 °C for the 4 % sample, while desorption of Zn was not observed for the 20 % sample. The introduction of the sub-gap states could be attributed to oxygen-rich and/or Zn-deficient defects in the a-IGZO thin films formed during thermal annealing.

Asymmetric capacitance-voltage characteristics of (Bi3.25, La0.75)Ti3O12 thin films grown on Si

2001 ◽  
Vol 40 (1-5) ◽  
pp. 225-234 ◽  
Author(s):  
Taekjib Choi ◽  
Youngsung Kim ◽  
Jaichan Lee
Keyword(s):  
Thin Films ◽  
Capacitance Voltage

Capacitance–voltage measurements of Ge–Sb–Te thin films

2007 ◽  
Vol 77 (1) ◽  
pp. 015701 ◽  
Author(s):  
H Ghamlouche ◽  
S T Mahmoud ◽  
N Qamhieh ◽  
S Ahmed ◽  
H Al-Shamisi
Keyword(s):  
Thin Films ◽  
Capacitance Voltage

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE

2010 ◽  
Vol 24 (22) ◽  
pp. 4203-4208 ◽  
Author(s):  
HUI-SEONG HAN ◽  
GWANG-GEUN LEE ◽  
BYUNG-EUN PARK
Keyword(s):  
Thin Films ◽  
Polyvinylidene Fluoride ◽  
Oxide Thickness ◽  
Voltage Sweep ◽  
Window Width ◽  
Capacitance Voltage ◽  
Coating Method ◽  
Insulator Layers ◽  
Lanthanum Zirconium Oxide ◽  
P Type

Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide ( LaZrO x) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrO x thin films were crystallized at 750°C for 30 min in an O 2 ambient. Negligible hysteresis was observed from the C–V (capacitance-voltage) characteristic of the LaZrO x/ Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrO x/ Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the C–V curve of the Au/PVDF - TrFE/LaZrO x/ Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm 2 at 35 kV/cm for a 100-nm-thick film.

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