Fast Detrapping Transients in High-K Dielectric Films

2019 ◽  
Vol 25 (7) ◽  
pp. 259-268
Author(s):  
Rosario Rao ◽  
Fernanda Irrera
Keyword(s):  
Dielectric Films ◽  
High K ◽  
High K Dielectric

scholarly journals ELECTRODELESS MEASUREMENT TECHNIQUE OF COMPLEX DIELECTRIC PERMITTIVITY OF HIGH-K DIELECTRIC FILMS IN THE MILLIMETER WAVELENGTH RANGE

2016 ◽  
Vol 52 ◽  
pp. 161-167 ◽  
Author(s):  
Igor V. Kotelnikov ◽  
Andrey G. Altynnikov ◽  
Anatoly Konstantinovich Mikhailov ◽  
Valentina V. Medvedeva ◽  
Andrey Kozyrev
Keyword(s):  
Dielectric Permittivity ◽  
Wavelength Range ◽  
Measurement Technique ◽  
Complex Dielectric Permittivity ◽  
Dielectric Films ◽  
Millimeter Wavelength ◽  
High K ◽  
High K Dielectric

Modelling the Deposition of High-k Dielectric Films by First Principles

2004 ◽  
Vol 13 (1-3) ◽  
pp. 117-120 ◽  
Author(s):  
Simon D. Elliott ◽  
Henry P. Pinto
Keyword(s):  
First Principles ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

Interfacial Structures and Electrical Properties of HfO2 Gate Dielectric

2012 ◽  
Vol 550-553 ◽  
pp. 1980-1984
Author(s):  
Duo Cao ◽  
Xin Hong Cheng ◽  
Ting Ting Jia ◽  
You Wei Zhang ◽  
Da Wei Xu
Keyword(s):  
Gate Dielectric ◽  
Photoelectron Spectra ◽  
Dielectric Films ◽  
Electrical Measurements ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
High K ◽  
Interfacial States ◽  
Current Densities ◽  
High K Dielectric

HfO2high-k dielectric films of 4nm and 5nm were both grown on Si substrate with the method of PEALD at 160°C. Both were treated with rapid thermal annealing (RTA) process at 500°C. High resolution transmission electron microscopy (HRTEM) indicated both films were not crystallized. X-ray photoelectron spectra (XPS) indicated that Hf-silicate was formed in the interfacial layer, and the valence-band offset (VBO) between the dielectric film and the substrate interface was calculated to be 3.5 eV. The electrical measurements indicated that the leakage current densities of the four and five nanometers’ sample were 1.0mA/cm2and 0.8mA/cm2at gate bias of 1V, and the equivalent oxide thicknesses of them were 0.9nm and 1.2nm respectively. Densities of interfacial states of them were calculated.

Optical properties of La-based high-K dielectric films

2005 ◽  
Vol 23 (6) ◽  
pp. 1676-1680 ◽  
Author(s):  
E. Cicerrella ◽  
J. L. Freeouf ◽  
L. F. Edge ◽  
D. G. Schlom ◽  
T. Heeg ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dielectric Films ◽  
High K ◽  
High K Dielectric
Sign in / Sign up

Export Citation Format

Share Document