High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability

Sung Kyu Park; Yong-Hoon Kim; Hyun-Soo Kim; Jeong-In Han

doi:10.1149/1.3119037

High Performance Solution-Processed and Lithographically Patterned Zinc–Tin Oxide Thin-Film Transistors with Good Operational Stability

Electrochemical and Solid-State Letters ◽

10.1149/1.3119037 ◽

2009 ◽

Vol 12 (7) ◽

pp. H256 ◽

Cited By ~ 64

Author(s):

Sung Kyu Park ◽

Yong-Hoon Kim ◽

Hyun-Soo Kim ◽

Jeong-In Han

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Operational Stability ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide

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Solution-processed zinc-tin oxide thin-film transistors with high performance and improved uniformity

68th Device Research Conference ◽

10.1109/drc.2010.5551871 ◽

2010 ◽

Author(s):

Chen-Guan Lee ◽

Ananth Dodabalapur

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Solution Processed ◽

Zinc Tin Oxide

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High-Performance Solution-Processed Zinc–Tin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays

IEEE Electron Device Letters ◽

10.1109/led.2016.2623318 ◽

2016 ◽

Vol 37 (12) ◽

pp. 1586-1589 ◽

Cited By ~ 12

Author(s):

Tae-Jun Ha

Keyword(s):

Thin Film ◽

Low Temperature ◽

Tin Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Solution Processed ◽

Flexible Displays ◽

Zinc Tin Oxide

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Effect of Zinc/Tin Composition Ratio on the Operational Stability of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

IEEE Electron Device Letters ◽

10.1109/led.2011.2171913 ◽

2012 ◽

Vol 33 (1) ◽

pp. 50-52 ◽

Cited By ~ 44

Author(s):

Yong-Hoon Kim ◽

Jeong-In Han ◽

Sung Kyu Park

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Operational Stability ◽

Oxide Thin Film ◽

Solution Processed ◽

Composition Ratio ◽

Stability Of Solution ◽

Zinc Tin Oxide

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Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

ECS Transactions ◽

10.1149/1.3481250 ◽

2019 ◽

Vol 33 (5) ◽

pp. 295-299 ◽

Cited By ~ 1

Author(s):

Bong-Jin Kim ◽

Hyung-Jun Kim ◽

Sung Mok Jung ◽

Tae-Sik Yoon ◽

Yong-Sang Kim ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Semiconductor ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Effect ◽

Zinc Tin Oxide

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The Potassium‐Assisted P‐Type Characteristics of Tin Oxide in Solution‐Processed High‐Performance Metal Oxide Thin‐Film Transistors

physica status solidi (a) ◽

10.1002/pssa.202170052 ◽

2021 ◽

Vol 218 (18) ◽

pp. 2170052

Author(s):

Sooji Nam ◽

Su-Jae Lee ◽

Jae-Eun Pi ◽

Jong-Heon Yang ◽

Chi-Sun Hwang ◽

...

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Tin Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Solution Processed ◽

Metal Oxide Thin Film ◽

P Type

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P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.13172 ◽

2019 ◽

Vol 50 (1) ◽

pp. 1298-1301

Author(s):

Tae Soo Jung ◽

Heesoo Lee ◽

Hee Jun Kim ◽

Jin Hyeok Lee ◽

Won Kyung Min ◽

...

Keyword(s):

Thin Film ◽

Alkali Metal ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Stability Of Solution ◽

Zinc Tin Oxide ◽

The Stability

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Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.1109/am-fpd.2015.7173189 ◽

2015 ◽

Author(s):

Ravindra Naik Bukke ◽

Christophe Avis ◽

Taehun Kim ◽

Jin Jang

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Zirconium Oxide ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Ozone Treatment ◽

Solution Processed ◽

Zinc Tin Oxide ◽

Uv Ozone

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Fabrication of solution-processed nitrogen-doped niobium zinc tin oxide thin film transistors using ethanolamine additives

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.09.151 ◽

2017 ◽

Vol 729 ◽

pp. 370-378 ◽

Cited By ~ 2

Author(s):

Jiann-Shing Jeng ◽

Chi-Min Wu

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Solution Processed ◽

Nitrogen Doped ◽

Zinc Tin Oxide

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Enhanced mobility of solution-processed polycrystalline zinc tin oxide thin-film transistors via direct incorporation of water into precursor solution

Applied Physics Letters ◽

10.1063/1.4896265 ◽

2014 ◽

Vol 105 (12) ◽

pp. 122105 ◽

Cited By ~ 12

Author(s):

Genmao Huang ◽

Lian Duan ◽

Yunlong Zhao ◽

Guifang Dong ◽

Deqiang Zhang ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Precursor Solution ◽

Oxide Thin Film ◽

Solution Processed ◽

Polycrystalline Zinc ◽

Zinc Tin Oxide ◽

Enhanced Mobility ◽

Direct Incorporation

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Effects of Annealing Temperature on Electrical Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.061101 ◽

2012 ◽

Vol 51 (6R) ◽

pp. 061101 ◽

Cited By ~ 6

Author(s):

Jeong-Soo Lee ◽

Yong-Jin Kim ◽

Yong-Uk Lee ◽

Yong-Hoon Kim ◽

Jang-Yeon Kwon ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Oxide Thin Film ◽

Electrical Characteristics ◽

Solution Processed ◽

Zinc Tin Oxide

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