Hafnium Oxide Etching Using Hydrogen Chloride Gas

2019 ◽  
Vol 19 (1) ◽  
pp. 289-299 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yoshitsugu Kobori ◽  
Masahiko Yamaji ◽  
Sadayoshi Horii ◽  
Yasuo Kunii
Keyword(s):  
Hydrogen Chloride ◽  
Hafnium Oxide ◽  
Oxide Etching

Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

2009 ◽  
Vol 48 (12) ◽  
pp. 125503 ◽  
Author(s):  
Hitoshi Habuka ◽  
Masahiko Yamaji ◽  
Yoshitsugu Kobori ◽  
Sadayoshi Horii ◽  
Yasuo Kunii
Keyword(s):  
Oxide Film ◽  
Hydrogen Chloride ◽  
Hafnium Oxide

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Chlorination of 2,4,6-trichlorophenol in acidic aqueous medium

1985 ◽  
Vol 50 (8) ◽  
pp. 1842-1851 ◽  
Author(s):  
Petr Švec
Keyword(s):  
Reaction Mechanism ◽  
Aqueous Medium ◽  
Hydrogen Chloride ◽  
Reaction Medium ◽  
Model Experiments ◽  
Sulfuric And Hydrochloric Acids

The course of chlorination of 2,4,6-trichlorophenol (I) in water and approximately 20% sulfuric and hydrochloric acids has been investigated. In all these media the reaction gives primarily 2,4,6,6-tetrachloro-2,4-cyclohexadienone (II) which is subsequently chlorinated under formation of polychlorinated alicyclic ketones or isomerized to give the more stable 2,4,6,6-tetrachloro-2,5-cyclohexadienone (III), the precursor of further arising chlorinated 1,4-benzoquinones. The ratio of the arising polychlorinated alicyclic ketones to chlorinated 1,4-benzoquinones is significantly influenced by concentration of hydrogen chloride in the reaction medium. On the basis of model experiments, the reaction mechanism of exhaustive chlorination of 2,4,6-trichlorophenol has been suggested.

Preparation of Chloro and Sulfanyl Derivatives of 1-(2-Deoxy-4-C-hydroxymethyl-α-L-threo-Pentofuranosyl)uracil

1997 ◽  
Vol 62 (7) ◽  
pp. 1114-1127 ◽  
Author(s):  
Hubert Hřebabecký ◽  
Jan Balzarini ◽  
Antonín Holý
Keyword(s):  
Nucleophilic Substitution ◽  
Hydrogen Chloride ◽  
Thionyl Chloride ◽  
Sodium Methoxide ◽  
Thioacetic Acid ◽  
Uracil Derivatives ◽  
Derivatives Of ◽  
Hiv 1

3'-Chloro and 3'-acetylsulfanyl derivatives of 1-(2-deoxy-4-C-hydroxymethyl-α-L-threo-pentofuranosyl)uracil were prepared by reaction of 2,3'-anhydro-1-{5'-O-benzoyl-4'-C-[(benzoyloxy)methyl]-2'-deoxy-α-L-erythro-pentofuranosyl}uracil (3) with hydrogen chloride and thioacetic acid, respectively. The reaction with hydrogen chloride gave a mixture of N-1 and N-3 substituted uracil derivatives 12 and 14. Reaction of 1-{3-O-benzoyl-4-C-[(benzoyloxy)methyl]-2-deoxy-α-L-threo-pentofuranosyl}uracil (7) with thionyl chloride and subsequent debenzoylation afforded 1-(4-C-chloromethyl-2-deoxy-β-D-erythro-pentofuranosyl)uracil (19). Nucleophilic substitution with lithium thioacetate, followed by deacylation, converted 1-{3-O-benzoyl-4-C-[(benzoyloxy)methyl]-2-deoxy-5-O-p-toluenesulfonyl-α-L-threo-pentofuranosyl}uracil (9) into 1-(2-deoxy-4-C-sulfanylmethyl-β-D-erythro-pentofuranosyl)uracil (21). The obtained thiols were oxidized with iodine or air to give 1,1'-[disulfandiylbis(2,3-dideoxy-4-hydroxymethyl-α-L-threo-pentofuranose-3,1-diyl]di(pyrimidine-2,4-(1H,3H)-dione) (17) and 1,1'-[disulfandiylbis(2,5-dideoxy-4-hydroxymethyl-α-L-threo-pentofuranose-5,1-diyl]di(pyrimidine-2,4(1H,3H)-dione) (22). Reaction of 1-{3-acetylsulfanyl-5-O-methanesulfonyl-4-C-[(benzoyloxy)methyl]-2,3-dideoxy-α-L-threo-pentofuranosyl)}uracil (24) with methanolic sodium methoxide afforded 1-(3,5-anhydro-2,3-dideoxy-4-C-hydroxymethyl-3-sulfanyl-α-L-threo-pentofuranosyl)uracil (25). The same reagent was used in the preparation of 1-(3,5-anhydro-2-deoxy-4-C-hydroxymethyl-α-L-threo-pentofuranosyl)uracil (26) from 1-{4-C-[(benzoyloxy)methyl]-2-deoxy-5-O-p-toluenesulfonyl-α-L-threo-pentofuranosyl}uracil (8). From the series of 4'-substituted 2'-deoxyuridine derivatives, synthesized in this study, solely the 4'-chloromethyl derivative 19 and the oxetane derivative 26 exhibited an appreciable activity against HIV-1 and HIV-2.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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