InGaN-Based Light-Emitting Diodes with a Cone-Shaped Sidewall Structure Fabricated Through a Crystallographic Wet Etching Process

2009 ◽  
Vol 12 (7) ◽  
pp. H233 ◽  
Author(s):  
Chia-Feng Lin ◽  
Chun-Min Lin ◽  
Chung-Chieh Yang ◽  
Wei-Kai Wang ◽  
Yu-Chieh Huang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Etching Process ◽  
Light Emitting

InGaN/GaN Light-Emitting Diodes with Overcut-Shaped Periodic Microstructures Formed by Wet Etching Process

2009 ◽  
Vol 12 (8) ◽  
pp. H299 ◽  
Author(s):  
Hyung Gu Kim ◽  
Hyun Kyu Kim ◽  
Hee Yun Kim ◽  
Jae Hyoung Ryu ◽  
Ji hye Kang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Etching Process ◽  
Light Emitting ◽  
Periodic Microstructures

Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

2011 ◽  
Vol 23 (19) ◽  
pp. 1373-1375 ◽  
Author(s):  
Yi-Keng Fu ◽  
Bo-Chun Chen ◽  
Yen-Hsiang Fang ◽  
Ren-Hao Jiang ◽  
Yu-Hsuan Lu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Etching Process ◽  
Light Emitting

scholarly journals Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching

2010 ◽  
Vol 18 (9) ◽  
pp. 9728 ◽  
Author(s):  
Younghun Jung ◽  
Jihyun Kim ◽  
Soohwan Jang ◽  
Kwang Hyeon Baik ◽  
Yong Gon Seo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Light Extraction ◽  
Light Emitting ◽  
Sapphire Substrates

Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

2006 ◽  
Vol 18 (14) ◽  
pp. 1512-1514 ◽  
Author(s):  
Seok-In Na ◽  
Ga-Young Ha ◽  
Dae-Seob Han ◽  
Seok-Soon Kim ◽  
Ja-Yeon Kim ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Wet Etching ◽  
Light Emitting

Improved Extraction Efficiency of Light-Emitting Diodes by Wet-Etching Modifying AZO Surface Roughness

2011 ◽  
Vol 23 (6) ◽  
pp. 362-364 ◽  
Author(s):  
Ting-Wei Kuo ◽  
Shi-Xiong Lin ◽  
Yueh-Yu Hung ◽  
Jui-Hong Horng ◽  
Mau-Phon Houng
Keyword(s):  
Surface Roughness ◽  
Light Emitting Diodes ◽  
Extraction Efficiency ◽  
Wet Etching ◽  
Light Emitting

scholarly journals Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
Ray-Hua Horng
Keyword(s):  
Light Emitting Diodes ◽  
Substrate Surface ◽  
Light Output ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Light Output Power ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

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