New Structure Improves Copper Phthalocyanine (CuPc) Order and Decrease the Device Resistance

2019 ◽  
Vol 18 (1) ◽  
pp. 1075-1080
Author(s):  
Ge Liu ◽  
Ming Liu ◽  
Liwei Shang ◽  
Zhouyu Ji ◽  
Xinghua Liu ◽  
...  
Keyword(s):  
Copper Phthalocyanine ◽  
Device Resistance

High-Resolution Cryo-Electron Microscopy of Biological Macromolecules

1990 ◽  
Vol 48 (1) ◽  
pp. 126-127
Author(s):  
Yoshinori Fujiyoshi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diffraction Pattern ◽  
Superfluid Helium ◽  
Copper Phthalocyanine ◽  
Optical Diffraction ◽  
Irradiation Damage ◽  
Biological Macromolecules ◽  
Cross Sectional ◽  
Instrumental Resolution

The resolution of direct images of biological macromolecules is normally restricted to far less than 0.3 nm. This is not due instrumental resolution, but irradiation damage. The damage to biological macromolecules may expect to be reduced when they are cooled to a very low temperature. We started to develop a new cryo-stage for a high resolution electron microscopy in 1983, and successfully constructed a superfluid helium stage for a 400 kV microscope by 1986, whereby chlorinated copper-phthalocyanine could be photographed to a resolution of 0.26 nm at a stage temperature of 1.5 K. We are continuing to develop the cryo-microscope and have developed a cryo-microscope equipped with a superfluid helium stage and new cryo-transfer device.The New cryo-microscope achieves not only improved resolution but also increased operational ease. The construction of the new super-fluid helium stage is shown in Fig. 1, where the cross sectional structure is shown parallel to an electron beam path. The capacities of LN2 tank, LHe tank and the pot are 1400 ml, 1200 ml and 3 ml, respectively. Their surfaces are placed with gold to minimize thermal radiation. Consumption rates of liquid nitrogen and liquid helium are 170 ml/hour and 140 ml/hour, respectively. The working time of this stage is more than 7 hours starting from full LN2 and LHe tanks. Instrumental resolution of our cryo-stage cooled to 4.2 K was confirmed to be 0.20 nm by an optical diffraction pattern from the image of a chlorinated copper-phthalocyanine crystal. The image and the optical diffraction pattern are shown in Fig. 2 a, b, respectively.

Copper phthalocyanine-chitin, an adsorbent for carcinogen–nucleotide adducts

1999 ◽  
Author(s):  
Hikoya Hayatsu ◽  
Sanae Mimaki ◽  
Nao Ishizaki ◽  
Keiji Wakabayashi ◽  
Chitose Sugiyama
Keyword(s):  
Copper Phthalocyanine

Determining the exciton diffusion length of copper phthalocyanine in operating planar-heterojunction organic solar cells

2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Diffusion Length ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Thick Layer ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.

scholarly journals RRAM Random Number Generator Based on Train of Pulses

Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1831
Author(s):  
Binbin Yang ◽  
Daniel Arumí ◽  
Salvador Manich ◽  
Álvaro Gómez-Pau ◽  
Rosa Rodríguez-Montañés ◽  
...  
Keyword(s):  
Random Number ◽  
Random Number Generator ◽  
Random Access ◽  
Pulse Amplitude ◽  
Resistive Random Access Memory ◽  
Random Numbers ◽  
Number Generator ◽  
Security Applications ◽  
Device Resistance ◽  
New Strategy

In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude and width on the device resistance is also analyzed. For each pulse characteristic, the number of pulses required to drive the device to a particular resistance threshold is variable, and it is exploited to extract random numbers. Based on this behavior, a random number generator (RNG) circuit is proposed. To assess the performance of the circuit, the National Institute of Standards and Technology (NIST) randomness tests are applied to evaluate the randomness of the bitstreams obtained. The experimental results show that four random bits are simultaneously obtained, passing all the applied tests without the need for post-processing. The presented method provides a new strategy to generate random numbers based on RRAMs for hardware security applications.

Ultra-sensitive boscalid sensors based on β-cyclodextrin modified perfluorinated copper phthalocyanine field-effect transistor

2021 ◽  
Author(s):  
Yunpeng Zhang ◽  
Junhua Kuang ◽  
Jicheng Dong ◽  
Longxian Shi ◽  
Qingyuan Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Sensitive Detection ◽  
Effect Transistor

The increased use of pesticides has raised concerns about the risks of exposure to pesticides. Rapid, simple and sensitive detection of pesticides is still a challenge in the current analytical...

Noncoplanar organic field-effect transistor based on copper phthalocyanine

2006 ◽  
Vol 88 (12) ◽  
pp. 121907 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Yabin Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Organic Field Effect Transistor ◽  
Effect Transistor
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