Dielectric Bi[sub 3]NbO[sub 7] Thin Films Deposited on Polymer Substrates by Nanocluster Deposition for Flexible Electronic Device Applications

2009 ◽  
Vol 12 (5) ◽  
pp. G23 ◽  
Author(s):  
Hyun-Woo Lee ◽  
Won-Jae Lee ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Polymer Substrates ◽  
Flexible Electronic ◽  
Flexible Electronic Device ◽  
Device Applications

Conductive Oxides Role in Flexible Electronic Device Applications

2020 ◽  
pp. 121-148
Author(s):  
Shanmuga Sundar Dhanabalan ◽  
Arun Thirumurugan ◽  
Muniyandi Muneeswaran ◽  
Sitharthan R ◽  
Karthikeyan Madurakavi ◽  
...  
Keyword(s):  
Electronic Device ◽  
Flexible Electronic ◽  
Flexible Electronic Device ◽  
Device Applications

Nanotwinned CoCrFeMnNi high entropy alloy films for flexible electronic device applications

Vacuum ◽  
2021 ◽  
pp. 110249
Author(s):  
Ze Wang ◽  
Cheng Wang ◽  
Yi-Lu Zhao ◽  
Ji-Jung Kai ◽  
Chain-Tsuan Liu ◽  
...  
Keyword(s):  
Electronic Device ◽  
High Entropy Alloy ◽  
Alloy Films ◽  
High Entropy ◽  
Flexible Electronic ◽  
Flexible Electronic Device ◽  
Device Applications

A New Approach Using Artificial Substrates for Growth of High-Quality Precipitate-Free HTS Thin Films, Toward Electronic Device Applications

2005 ◽  
Vol 868 ◽  
Author(s):  
K. Endo ◽  
P. Badica ◽  
H. Sato ◽  
H. Akoh
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Artificial Substrates ◽  
High Quality ◽  
New Approach ◽  
Mesa Structure ◽  
Device Applications ◽  
And Performance

AbstractHigh quality thin films of HTS have been grown by MOCVD on substrates with artificial steps of predefined height and width. The surface of the films grown on the steps having width equal to the ‘double of the migration length' of the atomic species depositing on the substrate is totally free of precipitates: precipitates are gathered at the step edges where the free energy is lowest. The method has several advantages: it is simple, universal (it is independent of the materials, substrates, deposition technique or application) and allows control of precipitates segregates so that the quality and growth conditions of the films are the same as for the films grown on conventional substrates. The method is expected to result in new opportunities for the device fabrication, design and performance. As an example we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown on (001) SrTiO3 single crystal substrates with artificial steps of 20 μm.

Optimisation of growth of epitaxial Tl2Ba2Ca1Cu2O8 superconducting thin films for electronic device applications

1994 ◽  
Vol 235-240 ◽  
pp. 717-718 ◽  
Author(s):  
Peter C. Michael ◽  
L.-G. Johansson ◽  
L. Bengtsson ◽  
T. Claeson ◽  
Z.G. Ivanov ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Superconducting Thin Films ◽  
Device Applications
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