Oxide-Free Silicon to Silicon Carbide Heterobond

2019 ◽  
Vol 16 (8) ◽  
pp. 377-383
Author(s):  
Ling-Guang Li ◽  
Örjan Vallin ◽  
Jun Lu ◽  
Ulf Smith ◽  
Hans Norström ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Free Silicon

Bulk and epitaxial growth of micropipe-free silicon carbide on basal and rhombohedral plane seeds

2008 ◽  
Vol 245 (7) ◽  
pp. 1257-1271 ◽  
Author(s):  
B. M. Epelbaum ◽  
O. Filip ◽  
A. Winnacker
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Free Silicon

Codeposition of Free Silicon during CVD of Silicon Carbide

1995 ◽  
Vol 78 (1) ◽  
pp. 229-232 ◽  
Author(s):  
Jacob Yeheskel ◽  
Mordecai S. Dariel
Keyword(s):  
Silicon Carbide ◽  
Free Silicon

scholarly journals Study for the origin of fracture of advanced pore-free silicon carbide with damage tolerance

2008 ◽  
Vol 116 (1349) ◽  
pp. 126-129 ◽  
Author(s):  
Shinya MATSUDA ◽  
Masafumi MATSUSHITA ◽  
Manabu TAKAHASHI ◽  
Hiroaki OHFUJI ◽  
Nagatoshi OKABE
Keyword(s):  
Silicon Carbide ◽  
Damage Tolerance ◽  
Free Silicon

Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers

2007 ◽  
Vol 556-557 ◽  
pp. 117-120 ◽  
Author(s):  
Andrew J. Trunek ◽  
Philip G. Neudeck ◽  
David J. Spry
Keyword(s):  
Silicon Carbide ◽  
Crystallographic Orientation ◽  
Geometric Shape ◽  
Lateral Expansion ◽  
Free Silicon

The lateral expansion of thin homoepitaxial cantilevers from mesas has been used to produce areas of on-axis 4H-SiC completely free of dislocations. Cantilever expansion is influenced by the geometric shape and crystallographic orientation of the pregrowth mesa. In order to form larger areas of defect free silicon carbide (SiC), progressive coalescence must occur when adjoining cantilevers merge. The progressive coalescence is largely dictated by the shape and orientation of the pregrowth mesa. We report on refinements to the pregrowth mesa geometry and orientation that allows rapid initiation of cantilever growth and promotes progressive coalescence of merging cantilevers. These modifications to the pregrowth mesa geometry permit larger areas of defect free 4H-SiC to be realized.

Characterisation of Polycrystalline Silicon Carbide by Scanning and Transmission Electron Microscopy

1970 ◽  
Vol 28 ◽  
pp. 400-401 ◽  
Author(s):  
D. Faulkner ◽  
R. Stevens
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Transgranular Fracture ◽  
Engineering Material ◽  
Silicon Phase ◽  
Free Silicon ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Nuclear Environment ◽  
Neutron Absorption Cross Section

Silicon carbide is an extremely hard refractory material. Corrosion resistance, which is a general limitation of most carbides, is also good. These features alone make silicon carbide an important engineering material, but in addition, its low neutron absorption cross-section, and its behaviour under irradiation make it a particularly attractive material for use in a nuclear environment.The mechanical strength of self-bonded silicon carbide is primarily dependent on grain size and on the presence of free silicon in the material. Figure 1 shows a scanning electron micrograph of a fracture surface. The morphology is typical of a brittle transgranular fracture, although there is evidence of some ductility in the free silicon phase.

Bulk and Epitaxial Growth of Micropipe-Free Silicon Carbide on Basal and Rhombohedral Plane Seeds

2011 ◽  
pp. 33-61 ◽  
Author(s):  
Boris M. Epelbaum ◽  
Octavian Filip ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Free Silicon
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