Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer

2019 ◽  
Vol 16 (8) ◽  
pp. 203-209
Author(s):  
Hiroaki Himi ◽  
Seiji Fujino
Keyword(s):  
Amorphous Layer ◽  
Wafer Direct Bonding

Silicon Wafer Direct Bonding through the Amorphous Layer

1995 ◽  
Vol 34 (Part 2, No. 10B) ◽  
pp. L1322-L1324 ◽  
Author(s):  
Seiji Fujino ◽  
Masaki Matsui ◽  
Tadashi Hattori ◽  
Yoshihiro Hamakawa
Keyword(s):  
Silicon Wafer ◽  
Amorphous Layer ◽  
Wafer Direct Bonding

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

scholarly journals Dual Electrochemical Treatments to Improve Properties of Ti6Al4V Alloy

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2479
Author(s):  
Stefano Rossi ◽  
Luciana Volgare ◽  
Carine Perrin-Pellegrino ◽  
Carine Chassigneux ◽  
Erick Dousset ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Combined Treatment ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Good Alternative ◽  
Surface Treatments ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Fluid Environment

Surface treatments are considered as a good alternative to increase biocompatibility and the lifetime of Ti-based alloys used for implants in the human body. The present research reports the comparison of bare and modified Ti6Al4V substrates on hydrophilicity and corrosion resistance properties in body fluid environment at 37 °C. Several surface treatments were conducted separately to obtain either a porous oxide layer using nanostructuration (N) in ethylene glycol containing fluoride solution, or bulk oxide thin films through heat treatment at 450 °C for 3 h (HT), or electrochemical oxidation at 1 V for 3 h (EO), as well as combined treatments (N-HT and N-EO). In-situ X-ray diffraction and ex-situ transmission electron microscopy have shown that heat treatment gave first rise to the formation of a 30 nm thick amorphous layer which crystallized in rutile around 620 °C. Electrochemical oxidations gave rise to a 10 nm thick amorphous film on the top of the surface (EO) or below the amorphous nanotube layer (N-EO). Dual treated samples presented similar results with a more stable behavior for N-EO. Finally, for both corrosion and hydrophilicity points of view, the new combined treatment to get a total amorphous N-EO sample seems to be the best and even better than the partially crystallized N-HT sample.

Stability and Microstructure Characterization of Barrierless Cu (Sn, C) Films

2014 ◽  
Vol 1052 ◽  
pp. 163-168 ◽  
Author(s):  
Xiao Na Li ◽  
Lu Jie Jin ◽  
Li Rong Zhao ◽  
Chuang Dong
Keyword(s):  
Diffusion Barrier ◽  
Amorphous Layer ◽  
Barrier Effect ◽  
Co Doping ◽  
Cu Alloy ◽  
Large Atom ◽  
Cu Film ◽  
Small Atom ◽  
Lower Resistivity

Thermal stability, adhesion and electronic resistivity of the Cu alloy films with diffusion barrier elements (large atom Sn and small atom C) have been studied. Ternary Cu (0.6 at.% Sn, 2 at.% C) films were prepared by magnetron co-sputtering in this work. The microstructure and resistivity analysis on the films showed that the Cu (0.6 at.% Sn, 2 at.% C) film had better adhesion with the substrate and lower resistivity (2.8 μΩ·cm, after annealing at 600 °C for 1 h). Therefore, the doping of carbon atoms makes less effect to the resistivity by decreasing the amount of the doped large atoms, which results in the decreasing of the whole resistivity of the barrierless structure. After annealing, the doped elements in the film diffused to the interface to form self-passivated amorphous layer, which could further hinder the diffusion between Cu and Si. So thus ternary Cu (0.6 at.% Sn, 2 at.% C) film had better diffusion barrier effect. Co-doping of large atoms and small atoms in the Cu film is a promising way to improve the barrierless structure.

scholarly journals On the amorphous layer in bone mineral and biomimetic apatite: A combined small- and wide-angle X-ray scattering analysis.

2020 ◽  
Author(s):  
Federica Bertolotti ◽  
Francisco J. Carmona ◽  
Gregorio Dal Sasso ◽  
Gloria B. Ramírez-Rodríguez ◽  
José Manuel Delgado-López ◽  
...  
Keyword(s):  
Bone Mineral ◽  
Amorphous Layer ◽  
Wide Angle ◽  
X Ray ◽  
X Ray Scattering ◽  
Biomimetic Apatite ◽  
Ray Scattering

scholarly journals Heat transport through propagon-phonon interaction in epitaxial amorphous-crystalline multilayers

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Takafumi Ishibe ◽  
Ryo Okuhata ◽  
Tatsuya Kaneko ◽  
Masato Yoshiya ◽  
Seisuke Nakashima ◽  
...  
Keyword(s):  
Group Velocity ◽  
Density Of States ◽  
Heat Dissipation ◽  
Lattice Mismatch ◽  
Lead Telluride ◽  
Amorphous Layer ◽  
Interface Layer ◽  
Phonon Transport ◽  
Nanoscale Systems ◽  
Phonon Group Velocity

AbstractManaging heat dissipation is a necessity for nanoscale electronic devices with high-density interfaces, but despite considerable effort, it has been difficult to establish the phonon transport physics at the interface due to a “complex” interface layer. In contrast, the amorphous/epitaxial interface is expected to have almost no “complex” interface layer due to the lack of lattice mismatch strain and less associated defects. Here, we experimentally observe the extremely-small interface thermal resistance per unit area at the interface of the amorphous-germanium sulfide/epitaxial-lead telluride superlattice (~0.8 ± 4.0 × 10‒9 m2KW−1). Ab initio lattice dynamics calculations demonstrate that high phonon transmission through this interface can be predicted, like electron transport physics, from large vibron-phonon density-of-states overlapping and phonon group velocity similarity between propagon in amorphous layer and “conventional” phonon in crystal. This indicates that controlling phonon (or vibron) density-of-states and phonon group velocity similarity can be a comprehensive guideline to manage heat conduction in nanoscale systems.

scholarly journals The Effects of Amorphous Layer Regrowth on Carbon Activation in GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
A.J. Moll ◽  
J.W. Ager ◽  
K.M. Yu ◽  
W. Walukiewicz ◽  
E.E. Haller
Keyword(s):  
Hole Concentration ◽  
Amorphous Layer ◽  
Free Hole ◽  
Initial Results

ABSTRACTThe effect of the Ga dose on the activation of implanted carbon in GaAs is determined. The free hole concentration is found to depend on the depth of the amorphous layer created by the Ga co-implant. Initial results on C implantation in InP indicate the behavior of C is very different in InP when compared to GaAs. The role of precipitation in reducing the activation of C in both GaAs and InP is discussed.

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