Scanning Transmission Electron Microscopy Studies of Interface Stability and Point Defects in Gate Stacks with High-k Dielectrics

2019 ◽  
Vol 16 (5) ◽  
pp. 177-183
Author(s):  
Susanne Stemmer ◽  
Melody P. Agustin ◽  
Dmitri O. Klenov
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Point Defects ◽  
Scanning Transmission Electron Microscopy ◽  
Gate Stacks ◽  
Interface Stability ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
High K ◽  
Scanning Transmission

Advanced Characterization of Novel Gate Stacks for Si CMOS by Scanning Transmission Electron Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 290-291
Author(s):  
Susanne Stemmer ◽  
Melody D Agustin ◽  
Yan Yang ◽  
Steffen Schmidt ◽  
Brendan Foran ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Scanning Transmission Electron Microscopy ◽  
Advanced Characterization ◽  
Gate Stacks ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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