Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

2008 ◽  
Vol 155 (10) ◽  
pp. H807 ◽  
Author(s):  
H. L. Lu ◽  
G. Scarel ◽  
C. Wiemer ◽  
M. Perego ◽  
S. Spiga ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nio Films

Energy Levels, Electronic Properties, and Rectification in Ultrathin p-NiO Films Synthesized by Atomic Layer Deposition

2012 ◽  
Vol 116 (32) ◽  
pp. 16830-16840 ◽  
Author(s):  
Elijah Thimsen ◽  
Alex B. F. Martinson ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin
Keyword(s):  
Atomic Layer Deposition ◽  
Electronic Properties ◽  
Energy Levels ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nio Films

Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma

2018 ◽  
Vol 35 (12) ◽  
pp. 2474-2479 ◽  
Author(s):  
Su-Hyeon Ji ◽  
Woo-Sung Jang ◽  
Jeong-Wook Son ◽  
Do-Heyoung Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nio Films ◽  
O2 Plasma

Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

2008 ◽  
Vol 92 (22) ◽  
pp. 222907 ◽  
Author(s):  
H. L. Lu ◽  
G. Scarel ◽  
M. Alia ◽  
M. Fanciulli ◽  
Shi-Jin Ding ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Nio Films

Highly effective synthesis of NiO/CNT nanohybrids by atomic layer deposition for high-rate and long-life supercapacitors

2016 ◽  
Vol 45 (35) ◽  
pp. 13779-13786 ◽  
Author(s):  
Lei Yu ◽  
Guilong Wang ◽  
Gengping Wan ◽  
Guizhen Wang ◽  
Shiwei Lin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Atomic Layer ◽  
High Rate ◽  
Excellent Performance ◽  
Layer Deposition ◽  
Effective Synthesis ◽  
Long Life ◽  
Supercapacitor Applications ◽  
Nio Films

Uniform and high-efficiency NiO films coated on CNTs with controllable thickness were synthesized by an ALD method, exhibiting an excellent performance for supercapacitor applications.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Sign in / Sign up

Export Citation Format

Share Document