Low Temperature Processes of Organic Thin Film Transistor with Gate Dielectric of Silicon Dioxide Deposited by Scanning Atmospheric-Pressure Technology

2019 ◽  
Vol 11 (25) ◽  
pp. 59-65
Author(s):  
Kow-Ming Chang ◽  
Shih-Syuan Huang ◽  
Chih-Hsiang Lin ◽  
Song Hong Huang ◽  
Yong Mao Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Atmospheric Pressure ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Dissipation Factor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Metal Insulator Metal ◽  
Oligomeric Silsesquioxane ◽  
Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

A New Top Gate Pentacene Organic Thin Film Transistor Employing Vapor Deposited Polyimide as A Gate Dielectric

2006 ◽  
Vol 937 ◽  
Author(s):  
Chang-Wook Han ◽  
Sang-Geun Park ◽  
Chang-Yeon Kim ◽  
Min-Koo Han ◽  
Gun-Woo Hyung ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polyimide Film ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Ft Ir

ABSTRACTA top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.

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